SSF2418EB VBSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 8

Technical content

FEATURES

  • Halogen-free Option Available  TrenchFET ® Power MOSFETs PRODUCT SUMMARY VDS (V) RDS(on) (Ω)I D (A) 0.024 at VGS = 4.5 V 6.0 0.028 at VGS = 2.5 V 5.0 Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C ID 6.0 5.2 A TA = 70 °C 4.8 4.2 Pulsed Drain Current IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C PD 1.5 1.0 WTA = 70 °C 0.96 0.64 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Max. Unit Maximum Junction-to-Ambienta t ≤ 10 s RthJA 72 83 °C/WSteady State 100 120 Maximum Junction-to-Foot (Drain) Steady State RthJF 55 70 Available Pb-free RoHS* COMPLIANT D D D1/D2 TSOP6 Top View D1/D2 G11 SSF2418EB www.VBsemi.com  100 % R g Tested  Compliant to RoHS Directive 2002/95/EC g A ll data sheet.com

Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. a Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.5 1.5 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V ± 200 nA Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 1 µAVDS = 20 V, VGS = 0 V, TJ = 70 °C 25 On-State Drain Currentb ID(on) VDS ≤ 5 V, VGS = 4.5 V 30 A Drain-Source On-State Resistanceb RDS(on) VGS = 4.5 V, ID = 5.5 A 0.024 ΩVGS = 2.5 V, ID = 3.5 A 0.028 Forward Transconductanceb gfs VDS = 10 V, ID = 5.5 A 30 S Diode Forward Voltageb VSD IS = 1.5 A, VGS = 0 V 0.71 1.2 V Dynamica Total Gate Charge Qg VDS = 10 V, VGS = 4.5 V, ID = 5.5 A 12 18 nCGate-Source Charge Qgs 2.2 Gate-Drain Charge Qgd 3.6 Tur n-On Delay Time td(on) VDD = 10 V, RL = 10 Ω ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω 245 365 ns Rise Time tr 330 495 Turn-Off Delay Time td(off) 860 1300 Fall Time tf 510 765 Gate-Current vs. Gate-Source Voltage 0 3 6 9 12 15 18 - Gate Current (mA)IGSS VGS - Gate-to-Source Voltage (V) Gate Current vs. Gate-Source Voltage 0369 1 2 15 0.01 100 10000 T J = 25 °C - Gate Current (A) I GSS 0.1 1000 V GS - Gate-to-Source Voltage (V) T J = 150 °C www.VBsemi.com SSF2418EB g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature 0.5 1.0 1.5 2.0 4.5 6.0 012345 VGS = 5 thru 3 V 2 V 2.5 V VDS - Drain-to-Source Voltage (V) - Drain Current (A)ID 0.01 0.02 0.03 0.04 0.05 0.06 0 5 10 15 20 25 30 VGS = 4.5 V VGS = 2.5 V - On-Resistance (Ω)RDS(on) ID - Drain Current (A) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 2 5 5 0 7 5 100 125 150 V GS = 4.5 V I D = 5.5 A TJ - Junction Temperature (°C) (Normalized) - On-ResistanceRDS(on) Transfer Characteristics Gate Charge Source-Drain Diode Forward Voltage 0.5 1.0 1.5 2.0 2.5 6.0 T C = 125 °C - 55 °C VGS - Gate-to-Source Voltage (V) - Drain Current (A)ID 25 °C 0 3 6 9 12 15 V DS = 10 V I D = 5.5 A - Gate-to-Source Voltage (V) Qg - Total Gate Charge (nC) VGS 1.2 1.5 0.1 0 0.3 0.6 0.9 T J = 25 °C T J = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A) IS www.VBsemi.com SSF2418EB 1 V g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Gate-to-Source Voltage Single Pulse Power 0.00 0.01 0.02 0.03 0.04 0.05 0 123456 ID = 5.5 A - On-Resistance (Ω)R DS(on) VGS - Gate-to-Source Voltage (V) 0.001 160 200 100.1 Power (W) Time (s) 120 0.01 Threshold Voltage Safe Operating Area, Junction-to-Case - 0.6 - 0.4 - 0.2 0.0 0.2 0.4 - 50 - 25 0 2 5 5 0 7 5 100 125 150 I D = 250 µA Variance (V)VGS(th) TJ - Temperature (°C) 0.1 1 10 100 0.01 5 1 ms - Drain Current (A)ID 0.1 Limited by RDS(on)* T C = 25 °C Single Pulse 10 ms 100 ms DC 10 s 1 s VDS - Drain-to-Source Voltage (V) *V GS > minimum VGS at which RDS(on) is specified Normalized Thermal Transient Impedance, Junction-to-Ambient 0.1 0.01 10 -4 10 -3 10 -2 10 -1 1 100 600 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 1. Duty Cycle, D = 2. Per Unit Base = R th J A = 11 5 °C/W 3. T JM - T A = P DM Z th J A (t ) t 1 t 2 t 1 t 2 Notes: 4. Surface Mounted P DM Square Wave Pulse Duration (s) Normalized Ef fective T ransient Thermal Impedance www.VBsemi.com SSF2418EB g A ll data sheet.com

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 11 010-110-4 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance www.VBsemi.com SSF2418EB g A ll data sheet.com

L 5 4 R R C 0.15 M B A b C 0.08

0.17 Ref

-C- Seating Plane A 1 A 2 A -A- D -B- E 1 E L 2 (L 1 ) c 4x 1 4x 1 e 2 3 6 5 4 C 0.15 M B A b -B- E 1 E e 5-LEAD TSOP 6-LEAD TSOP TSOP: 5/6−LEAD JEDEC Part Number: MO-193C MILLIMETERS INCHES Dim Min Nom Max Min Nom Max A 0.91 - 1.10 0.036 - 0.043 A 1 0.01 - 0.10 0.0004 - 0.004 e 0.95 BSC 0.0374 BSC L 0.32 - 0.50 0.012 - 0.020 L 1 0.60 Ref 0.024 Ref L 2 0.25 BSC 0.010 BSC 0 4 8 0 4 8 1 7 Nom 7 Nom ECN: C-06593-Rev. I, 18-Dec-06 DWG: 5540 www.VBsemi.com SSF2418EB g A ll data sheet.com

RECOMMENDED MINIMUM PADS FOR TSOP-6 0.119 (3.023) Recommended Minimum Pads Dimensions in Inches/(mm) 0.099 (2.510) 0.064 (1.626) 0.028 (0.699) 0.039 (1.001) 0.020 (0.508) 0.019 (0.493) www.VBsemi.com SSF2418EB g A ll data sheet.com

All products due to improve reliability, function or design or for other reason s, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all pers ons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibili ty for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any inf ormation related to the product.(www.VBsemi.com) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by appli cable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of a ny products; (2) any and all liability, including but not limited to special, consequential damages or incidenta l ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guara ntee. Statement on certain types of applications are based on knowledge of the produ ct is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of . Statement on whether the product is suitable for a particular application is non-binding. It is the cu stomer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary d epending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifi cations do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warrant y herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi prod uct failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsem i act or document. Product names and trademarks referred to herein are trademarks of their respective representa tives will be all. MaterialCategoryPolicy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are dete rmined to be RoHS compliant and meets the definition of restrictions under Directive of the Euro pean Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substan ces in electrical and electronicequipment(EEE)-modification,unlessotherwisespecifiedasinconsistent.(www.VBsemi.com) PleasenotethatsomedocumentsmaystillrefertoTaiwanVBsemiRoHSDirective20 02/95/EC.We confirm that all products identified as consistent with the Directive 2002/95 / EC Eu ropean Directive 2011/65/. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply id entified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that a ll products conformtoconfirmcompliancewithIEC61249-2-21standardlevelJS709A. www.VBsemi.com SSF2418EB A ll data sheet.com