SSF2418EB GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 4 Rev.1.2 SSF E B 20V Dual N-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2418EB SSF2418EB SOT23-6 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V I D 6 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 30 A Maximum Power Dissipation P D 1.3 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 95 /W℃ GENERAL FEATURES
- V DS = 20V,I D =6A R DS(ON) < 30mΩ @ V GS =2.5V R DS(ON) < 26mΩ @ V GS =3.1V R DS(ON) < 22mΩ @ V GS =4.0V R DS(ON) < 21mΩ @ V GS =4.5V ESD Rating：2500V HBM
- High Power and current handling capability
- Lead free product
- Surface Mount Package
APPLICATIONS
- Battery protection
- Load switch
- Power management Marking and P in Assignment SOT T op V iew
DESCRIPTION
The SSF2418EB uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch. It is ESD protected. Schematic Diagram
www.goodark.com Page 2 of 4 Rev.1.2 SSF E B 20V Dual N-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V ±10 uA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 1 V V GS =4.5V, I D =6A 18 21 mΩ V GS =4.0V, I D =5.5A 19 22 mΩ V GS =3.1V, I D =5A 21 26 mΩ Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =4A 25 30 mΩ Forward Transconductance g FS V DS =5V,I D =6A 7 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 650 PF Output Capacitance C oss 170 PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz 150 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 20 nS Turn-on Rise Time t r 50 nS Turn-Off Delay Time t d(off) 64 nS Turn-Off Fall Time t f V DD =10V,I D =1A V GS =4.5V,R GEN =10Ω 40 nS Total Gate Charge Q g 8 nC Gate-Source Charge Q gs 1.5 nC Gate-Drain Charge Q gd V DS =10V,I D =6A, V GS =4.5V 2 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A 0.76 1.1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.2 SSF E B 20V Dual N-Channel MOSFET SOT23-6 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) NOTES： 1. All dimensions are in millimeters. 2. Dimensions are inclusive of plating 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.