SSF2418E GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 6 Rev.1.4 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 6 I DM Pulsed Drain Current② 30 A P D @TC = 25°C Power Dissipation③ 1.3 W V DS Drain-Source Voltage 20 V V GS Gate-to-Source Voltage ± 12 V ESD ESD Rating (HBM) 2 KV T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units R θJA Junction-to-ambient (t ≤ 10s) ④ — 95 ℃/W V DSS 20V R DS (on) 18mohm(typ.) I D SOT23-6 Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 6 Rev.1.0

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 20 — — V V GS = 0V, ID = 250μA — 18 21 V GS =4.5V,I D = 6A — 19 22 V GS =4V,I D = 5.5A — 21 26 V GS =3.1V,I D = 5A R DS(on) Static Drain-to-Source on-resistance — 25 30 mΩ V GS =2.5V,I D = 4A V GS(th) Gate threshold voltage 0.5 — 1 V V DS = V GS , I D = 250μA I DSS Drain-to-Source leakage current — — 1 μA V DS = 20V,V GS = 0V 10 V GS =10V I GSS Gate-to-Source forward leakage -10 μA V GS = -10V g FS Forward Transconductance — 7 — S V DS =5V,I D =6A Q g Total gate charge — 8 — Q gs Gate-to-Source charge — 1.5 — Q gd Gate-to-Drain("Miller") charge — 2 — nC V DS =10V, I D =6A, V GS =4.5V t d(on) Turn-on delay time — 20 — t r Rise time — 50 — t d(off) Turn-Off delay time — 64 — t f Fall time — 40 — ns V DD =10V,I D =1A V GS =4.5V,R GEN =10Ω C iss Input capacitance — 650 — C oss Output capacitance — 170 — C rss Reverse transfer capacitance — 150 — pF V GS = 0V V DS = 10V ƒ = 1.0MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 6 A I SM Pulsed Source Current (Body Diode) — — 30 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.76 1.1 V I S =1A, V GS =0V

www.goodark.com Page 3 of 6 Rev.1.0 Test Circuits and Waveforms Switch Waveforms:

www.goodark.com Page 4 of 6 Rev.1.0 Typical Electrical and Thermal Characteristics Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C. ⑥ The maximum current rating is limited by bond-wires. r(t),Normalized Effective Transient Thermal Impedance Figure 1 Normalized Maximum Transient Thermal Impedance Square Wave Pluse Duration(sec)

www.goodark.com Page 5 of 6 Rev.1.0 Mechanical Data Dimension In Millimeters Dimension In Inches Symbol Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.95(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0

www.goodark.com Page 6 of 6 Rev.1.0 Ordering and Marking Information Device Marking: 2418E Package (Available) SOT23-6 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box SOT23-6 3000 10 30000 4 120000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices