SSF2341E_15 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.1 Main Product Characteristics V DSS -20V R DS (on) 37mΩ (typ.) I D -4A Features and Benefits

Description

A =25℃ unless otherwise specified Symbol Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V -4 I D @ TC = 70°C Continuous Drain Current, V GS @ 10V -2.4 I DM Pulsed Drain Current -30 A P D @TC = 25°C Power Dissipation 1.4 W V DS Drain-Source Voltage -20 V V GS Gate-to-Source Voltage ± 8 V T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units R θJA Junction-to-ambient (t ≤ 10s) — 90 °C /W Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. SOT -23

www.goodark.com Page 2 of 7 Rev.1.1

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage -20 — — V V GS = 0V, I D = -250μA — 37 43 V GS =-4.5V,I D = -4A — 45 54 V GS =-2.5V,I D = -4A R DS(on) Static Drain-to-Source on-resistance — 56 73 mΩ V GS =-1.8V,I D = -2A -0.3 — -1.0 V DS = V GS , I D = -250μA V GS(th) Gate threshold voltage — -0.44 — V T J = 125°C — — -1 V DS = -16V,V GS = 0V I DSS Drain-to-Source leakage current — — -50 μA T J = 125°C 10 V GS =8V I GSS Gate-to-Source forward leakage -10 μA V GS = -8V Q g Total gate charge — Q gs Gate-to-Source charge — 0.77 Q gd Gate-to-Drain("Miller") charge — 3.5 nC I D = -4A, V DS =-10V, V GS = -4.5V t d(on) Turn-on delay time — t r Rise time — 8.6 t d(off) Turn-Off delay time — t f Fall time — ns V GS =-4.5V, V DS =-10V, R GEN =3Ω， C iss Input capacitance — 939 C oss Output capacitance — 130 C rss Reverse transfer capacitance — 111 pF V GS = 0V, V DS =-10V, ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — -4 A I SM Pulsed Source Current (Body Diode) — — -30 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — -0.76 -1.0 V I S =1A, V GS =0V trr Reverse Recovery Time — 8.7 — ns Qrr Reverse Recovery Charge — 2.3 — nC TJ = 25°C, IF =-4A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.1 Test Circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C Gate charge test circuit: Switching time test circuit: EAS test circuit:

www.goodark.com Page 6 of 7 Rev.1.1 Mechanical Data Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0 Symbol Dimension In Millimeters Dimension In Inches 0.95TYP 0.037TYP 0.55REF 0.022REF SOT-23 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.1.1 Ordering and Marking Information Device Marking: 2341E Package (Available) SOT-23 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box SOT23 3000 10 30000 4 120000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ to 150 ℃ @ 80% of Max V DSS CES R 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices