SSF2318E GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
www.goodark.com Page 1 of 4 Rev.1.0 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2318E SSF2318E SOT-23 Ø330mm 12mm 3000 units ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±8 V I D 6.5 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 30 A Maximum Power Dissipation P D 1.4 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 90 /W℃ GENERAL FEATURES
- V DS = 20V,I D =6.5A R DS(ON) < 34mΩ @ V GS =1.8V R DS(ON) < 26mΩ @ V GS =2.5V R DS(ON) < 22mΩ @ V GS =4.5V ESD Rating：2000V HBM
- High Power and current handing capability
- Lead free product
- Surface Mount Package
APPLICATIONS
- Battery protection
- Load switch
- Power management Marking and P in Assignment SOT T op V iew
DESCRIPTION
The SSF2318E uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. Schematic Diagram
www.goodark.com Page 2 of 4 Rev.1.0 ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V 1 μA V GS =±4.5V,V DS =0V ±1 uA Gate-Body Leakage Current I GSS V GS =±8V,V DS =0V ±10 uA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.4 0.6 1 V V GS =4.5V, I D =6.5A 18 22 mΩ V GS =2.5V, I D =5.5A 21 26 mΩ Drain-Source On-State Resistance R DS(ON) V GS =1.8V, I D =5A 26 34 mΩ Forward Transconductance g FS V DS =5V,I D =6.5A 7 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 1160 PF Output Capacitance C oss 200 PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz 140 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 6.5 nS Turn-on Rise Time t r 13 nS Turn-Off Delay Time t d(off) 50 nS Turn-Off Fall Time t f V DD =10V,I D =1A V GS =5V,R GEN =3Ω 30 nS Total Gate Charge Q g 10 nC Gate-Source Charge Q gs 2.3 nC Gate-Drain Charge Q gd V DS =10V,I D =6.5A, V GS =4.5V 3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A 0.76 1 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.0 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact