SSF2316E GOOD-ARK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
www.goodark.com Page 1 of 4 Rev. 1.0 SSF 16E 20V Dual N C hannel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity 2316E SSF2316E DFN3×3-8L - - - ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±12 V I D 7 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 40 A Maximum Power Dissipation P D 1.4 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 83 /W℃ GENERAL FEATURES
- V DS = 20V,I D = 7A R DS(ON) < 35mΩ @ V GS =2.5V R DS(ON) < 30mΩ @ V GS =3.1V R DS(ON) < 24mΩ @ V GS =4V R DS(ON) < 23mΩ @ V GS =4.5V ESD Rating：2000V HBM
- High Power and current handing capability
- Lead free product
- Surface Mount Package
APPLICATIONS
- Battery protection
- Load switch
- Power management P in Assignment Schematic Diagram DFN3 8L B o ttom V iew
www.goodark.com Page 2 of 4 Rev. 1.0 SSF 16E 20V Dual N C hannel MOSFET ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±8V,V DS =0V ±10 μA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 1.3 V V GS =4.5V, I D =4A 17 23 mΩ V GS =4V, I D =4A 18 24 mΩ V GS =3.1V, I D =4A 20 30 mΩ Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =2A 24 35 mΩ Forward Transconductance g FS V DS =10V,I D =3.5A 11 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 900 PF Output Capacitance C oss 350 PF Reverse Transfer Capacitance C rss V DS =8V,V GS =0V, F=1.0MHz 150 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 15 nS Turn-on Rise Time t r 100 nS Turn-Off Delay Time t d(off) 60 nS Turn-Off Fall Time t f V DD =10V,I D =1A V GS =4.5V,R GEN =6Ω 90 nS Total Gate Charge Q g 20 nC Gate-Source Charge Q gs 2.5 nC Gate-Drain Charge Q gd V DS =10V,I D =7A, V GS =4.5V 3 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =7A 0.83 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev. 1.0 SSF 16E 20V Dual N C hannel MOSFET DFN3×3-8L PACKAGE INFORMATION COMMON DIMENSIONS(MM) PKG. W ： VERY VERY THIN REF. MIN. NOM. MAX. A 0.70 0.75 0.80 A1 0.00 － 0.05 A3 0.2REF. D 2.95 3.00 3.05 E 2.95 3.00 3.05 b 0.25 0.30 0.35 L 0.30 0.40 0.50 D2 2.30 2.45 2.55 E2 2.50 1.65 1.75 e 0.65BSC NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact TOP VIEW BOTTOM VIEW SIDE VIEW