SSF2312 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
www.goodark.com Page 1 of 4 Rev.1.0 SSF 20V N-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity
2312 SSF2312 SOT-23 Ø180mm 8 mm 3000 units
ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±8 V I D 4.5 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 13.5 A Maximum Power Dissipation P D 1.25 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 100 /W ℃ ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±8V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) GENERAL FEATURES
- V DS = 20V,I D = 4.5A R DS(ON) < 40mΩ @ V GS =2.5V R DS(ON) < 33mΩ @ V GS =4.5V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF2312 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
APPLICATIONS
- Battery protection
- Load switch
- Power management Schematic D iagram Marking and P in Assignment SOT T op V iew D G S D S 2312
www.goodark.com Page 2 of 4 Rev.1.0 SSF 20V N-Channel MOSFET Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 0.65 1.2 V Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =4.5A 33 40 mΩ V GS =4.5V, I D =5A 27 33 mΩ Forward Transconductance g FS V DS =10V,I D =5A 10 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 500 PF Output Capacitance C oss 300 PF Reverse Transfer Capacitance C rss V DS =8V,V GS =0V, F=1.0MHz 140 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 20 40 nS Turn-on Rise Time t r 18 40 nS Turn-Off Delay Time t d(off) 60 108 nS Turn-Off Fall Time t f V DD =10V,I D =1A V GS =4.5V,R GEN =6Ω 28 56 nS Total Gate Charge Q g 10 15 nC Gate-Source Charge Q gs 2.3 nC Gate-Drain Charge Q gd V DS =10V,I D =5A,V GS =4.5V 2.9 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1A 1.2 V Diode Forward Current (Note 2) I S 1 A NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.0 SSF 20V N-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT: mm) Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.