SSF2306_15 GOOD-ARK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
www.goodark.com Page 1 of 4 Rev.1.0 PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity
2306 SSF2306 SOT-23 Ø180mm 8 mm 3000 units
ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ±12 V I D 5 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 20 A Maximum Power Dissipation P D 1.38 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 90 /W ℃ GENERAL FEATURES
- V DS = 30V,I D = 5A R DS(ON) < 50mΩ @ V GS =2.5V R DS(ON) < 35mΩ @ V GS =4.5V R DS(ON) < 30mΩ @ V GS =10V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF2306 uses advanced trench technology to provide excellent R DS(ON) low gate charge and operation with gate voltages as low as 2.5V.
APPLICATIONS
- Battery protection
- Load switch
- Power management Schematic D iagram Marking and P in Assignment SOT T op V iew D G S D S 2 3 0 6
www.goodark.com Page 2 of 4 Rev.1.0 ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 30 V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.5 1.2 V V GS =2.5V, I D =2.6A 50 mΩ V GS =4.5V, I D =5A 35 mΩ Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =5A 30 mΩ Forward Transconductance g FS V DS =5V,I D =5A 13 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 660 1050 PF Output Capacitance C oss 90 PF Reverse Transfer Capacitance C rss V DS =25V,V GS =0V, F=1.0MHz 70 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 6 nS Turn-on Rise Time t r 20 nS Turn-Off Delay Time t d(off) 20 nS Turn-Off Fall Time t f V DS =15V,I D =5A V GS =10V,R GEN =3.3Ω R D =3Ω 3 nS Total Gate Charge Q g 8.5 15 nC Gate-Source Charge Q gs 1.5 nC Gate-Drain Charge Q gd V DS =16V,I D =5A,V GS =4.5V 3.2 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =1.2A 1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 4 of 4 Rev.1.0 SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8°