SSF2305 GOOD-ARK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
www.goodark.com Page 1 of 6 Rev.1.0 SSF 2305 20V P-Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape Width Quantity
2305 SSF2305 SOT23 - - -
ABSOLUTE MAXIMUM RATINGS (T A =25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage V DS -20 V Gate-Source Voltage V GS ±12 V I D (25 -3 A I D (70 -1.8 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM -10 A Maximum Power Dissipation P D 1.25 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 100 /W ℃ GENERAL FEATURES
- V DS = -20V,I D = -3A R DS(ON) < 114mΩ @ V GS =-2.5V R DS(ON) < 89mΩ @ V GS =-4.5V
- High Power and current handing capability
- Lead free product
- Surface Mount Package
DESCRIPTION
The SSF2305 uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 0.5V. This device is suitable for use as a load switch or in PWM applications. A PPLICATIONS
- PWM applications
- Load switch
- Power management Schematic D iagram Marking and P in Assignment SOT23 T op V iew D G S
www.goodark.com Page 2 of 6 Rev.1.0 SSF 2305 20V P-Channel MOSFET ELECTRICAL CHARACTERISTICS (T A =25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250μA -20 V Zero Gate Voltage Drain Current I DSS V DS =-20V,V GS =0V -1 μA Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =-250μA -0.5 -1 V V GS =-4.5V, I D =-3A 62 89 Drain-Source On-State Resistance R DS(ON) V GS =-2.5V, I D =-2A 88 114 mΩ Forward Transconductance g FS V DS =-5V,I D =-3A 7 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 1160 PF Output Capacitance C oss 210 PF Reverse Transfer Capacitance C rss V DS =-10V,V GS =0V, F=1.0MHz 125 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 13.6 27.2 nS Turn-on Rise Time t r 8.6 17.2 nS Turn-Off Delay Time t d(off) 73.6 147.2 nS Turn-Off Fall Time t f V DD =-10V,I D =-3A V GS =-4.5V,R GEN =3Ω 34.6 69.2 nS Total Gate Charge Q g 9.6 12.7 nC Gate-Source Charge Q gs 1.1 nC Gate-Drain Charge Q gd V DS =-10V,I D =-3A,V GS =-4.5V 2.6 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-1A -1.2 V NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on 1in FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.goodark.com Page 6 of 6 Rev.1.0 SSF 2305 20V P-Channel MOSFET SOT-23 PACKAGE INFORMATION Dimensions in Millimeters (UNIT:mm) Dimensions in Millimeters Symbol MIN. MAX. A 0.900 1.150 A1 0.000 0.100 A2 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 E1 2.250 2.550 e 0.950TYP e1 1.800 2.000 L 0.550REF L1 0.300 0.500 θ 0° 8° NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.