SSF2302 GOOD-ARK | Alldatasheet
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www.goodark.com Page of Rev.2 SSF 2302 20V N Channel MOSFET PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Device Package Reel Size Tape W idth Quantity 230 SSF 230 SOT Ø 180mm 8 mm 3000 units ABSOLUTE MAXIMUM RATI NGS ( T A =25 unless otherwise noted) Para meter Symbol Limit Unit Drain Source Voltage V DS V Gate Source Voltage V G S V Drain C urr e nt Cont i nu o us@ Current P uls e d (Note 1) I D (25 2.4 A I D A I DM A Maximum Power Dissipation P D 0.9 W Operating Junction and Storage Temperat ure Range T J STG
55 To 150
Thermal Resistance,Junction to Ambient (Note 2) R θJA W GENERAL FEATURES V DS = 20V D 2.4 A R DS(ON) 115 mΩ @ V GS =2.5V R DS(ON) mΩ @ V GS =4.5V High Power and current handing capability Lead free product Surface Mount Package
DESCRIPTION
uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. A PPLICATIONS Battery protection Load switch Power management Schematic D iagram Marking and pin Assignment SOT T op V iew D G S G D S 2302
www.goodark.com Page of Rev.2 SSF 2302 20V N Channel MOSFET ELECTRICAL CHARACTERISTICS (T A =25 unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS D rain Source Breakdown Voltage BV DSS V GS =0V I D 250 μA V Zero Gate Voltage Drain Current I DSS V DS V,V GS =0V μA Gate Body Leakage Current I GSS V GS V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D 50μA 0.9 1.2 V Drain Source On State Resistance R DS(ON) V GS .5V, I D 3.1 A 115 mΩ V GS 4.5 V, I D 3.6 A mΩ Forward Transconductance g FS V DS V,I D 3.6 A S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss V DS V,V GS =0V, F=1.0M Hz PF Output Capacitance C oss 120 PF Reverse Transfer Capacitance C rss PF SWITCHING CHARACTERISTICS (Note 4) Turn on Delay Time t d(on) V DD =10V, R L = 2.8 Ω V GS =4.5V,R GEN =6Ω I D 3.6 nS Turn on Rise Time t r nS Turn Off Delay Time t d(off) nS Turn Off Fall Time t f nS Total Gate Charge Q g V DS =10V,I D 3.6 A,V GS =4.5V 4.0 nC Gate Source Charge Q gs 0.65 nC Gate Drain Charge Q gd 1.5 nC DRAIN SOURCE DIODE CHARACTERISTICS Diode Forward Voltage ( Note 3) V SD V GS =0V,I S 0.94 A 0.76 1.2 V Diode Forward Current (Note 2) I S 0.94 A NOTES: Repetitive Rating: Pulse width limited by maximum junction temperature. Surface Mounted on 1in FR4 Board , t ≤ 10 sec. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. Guaranteed by design, not subject to production testing.
www.goodark.com Page of Rev.2 SSF 2302 20V N Channel MOSFET Square Wave Pluse Duration(sec) Figure Normalized Maximum Transient Thermal Impedance Normalized Effective Transient Thermal Impedance Figure 13 Safe Operation Area I D Drain Current (A V DS Drain Source Volta ge (V)
www.goodark.com Page of Rev.2 SSF 2302 20V N Channel MOSFET SOT
23 PACKAGE INFORMATION
ns in Millimeters (UNIT : mm Symbol Dimensions in Millimeters MIN. MAX. A 0.900 1.150 0.000 0.100 0.900 1.050 b 0.300 0.500 c 0.080 0.150 D 2.800 3.000 E 1.200 1.400 2.250 2.550 e 0.950TYP 1.800 2.000 L 0.550REF 0.300 0.500 θ NOTES 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non lead sides should be less than 5 mils. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimen sions are not necessarily exact