SSF22A5E GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 5 Rev.1.0 Main Product Characteristics: V DSS 20V R DS(on) I D 238mA Features and Benefits: Description: Absolute Max Rating A =25℃ unless otherwise specified Symbol Parameter Max. Units ID Continuous Drain Current 238 IDM Pulsed Drain Current (t p ≤10μs) 714 mA PD Power Dissipation 300 mW VDS Drain-Source Voltage 20 V VGS Gate-to-Source Voltage ± 10 V TJ TSTG Operating Junction and Storage Temperature Range -55 to 150 T L Lead Temperature for Soldering Purposes 260 I SD Continuous Source Current (Body Diode) 238 mA Thermal Resistance Symbol Characterizes Value Unit R θJA Junction-to-Ambient (steady-state) 416 ℃/W Pin Assignment Schematic Diagram Low Gate Charge for Fast Switching Small 1.6 x 1.6 mm Footprint ESD Protected Gate Lead free product 150 ℃ operating temperature It utilizes the latest trench processing techniques to achieve fast switching speed and short reverse recovery time. These features combine to make this design an extremely efficient and reliable device for use in Power Management Load Switch, Level Shift, Cell Phones, Media Players, Digital Cameras, PDA’s, Video Games, Hand Held Computers, etc.
www.goodark.com Page 2 of 5 Rev.1.0
Electrical Characteristics
A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions BVDSS Drain-to-Source breakdown voltage 20 — — V VGS = 0V, ID = 100μA — 1.5 3.0 VGS = 4.5V, ID = 10mA RDS(on) Static Drain-to-Source on-resistance — 2.2 3.5 Ω VGS = 2.5V, ID = 10mA VGS(th) Gate threshold voltage 0.5 1.0 1.5 V VDS = 3V, ID = 100μA IDSS Drain-to-Source leakage current — — 1.0 μA VDS = 20V, VGS = 0V Gate-to-Source forward leakage
100 VGS =10V
-100 μA VGS = -10V g FS Forward Transconductance — — mS ID = 10mA,VDS=3V td(on) Turn-on delay time — tr Rise time — td(off) Turn-Off delay time — tf Fall time — ns VGS=4.5V, VDS=5V, ID=10mA, RG=10Ω Ciss Input capacitance — 11.5 Coss Output capacitance — Crss Reverse transfer capacitance 3.5 6.0 pF VGS = 0V, VDS =5V, ƒ = 1.0MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions VSD Diode Forward Voltage — 0.66 0.8 V IS=10mA, VGS=0V Notes: ①The maximum current rating is limited by bond-wires. Repetitive rating; pulse width limited by max. junction temperature.② ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C
www.goodark.com Page 3 of 5 Rev.1.0 Typical Electrical and Thermal Characteristics
www.goodark.com Page 4 of 5 Rev.1.0 Typical Electrical and Thermal Characteristics Test Circuits and Waveforms Switch Waveforms:
www.goodark.com Page 5 of 5 Rev.1.0 Mechanical Data(SC-89)：