SSF2160G4 SILIKRON | Alldatasheet
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Main Product Characteristics: VDSS 20V RDS(on) 28mohm(typ.) ID 4.5A 2160G4 2160G4S25 www.silikron.com Marking and pin Assignment SOT23-3 Schematic diagram Features and Benefits: Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Description: It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other
applications
Absolute max Rating: Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±10 V ID 4.5 A Drain Current-Continuous@ Current-Pulsed (Note 1) IDM 18 A Maximum Power Dissipation PD 1.1 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 110 /W℃
www.silikron.com Electrical Characterizes @TA=25℃ unless otherwise specified Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 20 V Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V 1 μA Gate-Body Leakage Current IGSS VGS=±10V,VDS=0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 0.65 0.75 1.2 V VGS=4.5V, ID=3.6A 28 40 mΩ Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=3.1A 36 60 mΩ Forward Transconductance gFS VDS=5V,ID=3.6A 4 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance Clss 500 PF Output Capacitance Coss 125 PF Reverse Transfer Capacitance Crss VDS=10V,VGS=0V, F=1.0MHz 70 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time td(on) 7 nS Turn-on Rise Time tr 5.3 nS Turn-Off Delay Time td(off) 16 nS Turn-Off Fall Time tf VDD=10V,ID=3.6A VGS=4.5V,RGEN=6Ω 10 nS Total Gate Charge Qg 10 nC Gate-Source Charge Qgs 2.3 nC Gate-Drain Charge Qgd VDS=10V,ID=4.2A, VGS=4.5V 2.9 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) VSD VGS=0V,IS=0.94A 0.8 1.2 V Diode Forward Current (Note 2) IS 4.5 A
Test circuits and Waveforms www.silikron.com Switch Waveforms: NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
r(t),Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration(sec) Figure 10: Normalized Maximum Transient Thermal Impedance www.silikron.com
Mechanical Data： SOT23-3 Dimensions in Millimeters (UNIT:mm) www.silikron.com NOTES： 1. Tolerance ±0.10mm (4 mil) unless otherwise specified 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
www.silikron.com Ordering and Marking Information Device Marking: S25 Package (Available) SOT23-3 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box SOT23-3 3000pcs 10pcs 30000pcs 4pcs 120000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ or 150 ℃ @ 80% of Max V DSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=125℃ or 150 ℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices
www.silikron.com ATTENTION: ■ Any and all Silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures t hat result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high- quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: Sales@silikron.com Technical Support: Technical@silikron.com Suzhou Silikron Semiconductor Corp. Building 11A Suchun Industrial Square, 428# Xinglong Street, Suzhou P. R . China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: Sales@silikron.com