SSF2160G4 GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.godark.com Page 1 of 8 Rev.1.0 Main Product Characteristics Features and Benefits
Description
Parameter Symbol Limit Unit Drain-Source Voltage V DS 20 V Gate-Source Voltage V GS ±10 V I D 4.5 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM 18 A Maximum Power Dissipation P D 1.1 W Operating Junction and Storage Temperature Range T J STG -55 To 150 ℃ Thermal Resistance Thermal Resistance,Junction-to-Ambient (Note 2) R θJA 110 /W ℃ V DSS 20V R DS (on) 28mohm(typ.) I D 4.5A SOT23-3 Marking and Pin Assignment Schematic Diagram Advanced trench MOSFET process technology Special designed for buttery protection, load switching and general power management Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 ℃ operating temperature Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buttery protection, power switching application and a wide variety of other applications. 2160G4 2160G4 S25
www.godark.com Page 2 of 8 Rev.1.0
Electrical Characteristics
A =25℃ unless otherwise specified Parameter Symbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 20 V Zero Gate Voltage Drain Current I DSS V DS =20V,V GS =0V 1 μA Gate-Body Leakage Current I GSS V GS =±10V,V DS =0V ±100 nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V GS(th) V DS GS D =250μA 0.65 0.75 1.2 V V GS =4.5V, I D =3.6A 28 40 mΩ Drain-Source On-State Resistance R DS(ON) V GS =2.5V, I D =3.1A 36 60 mΩ Forward Transconductance g FS V DS =5V,I D =3.6A 4 S DYNAMIC CHARACTERISTICS (Note4) Input Capacitance C lss 500 PF Output Capacitance C oss 125 PF Reverse Transfer Capacitance C rss V DS =10V,V GS =0V, F=1.0MHz 70 PF SWITCHING CHARACTERISTICS (Note 4) Turn-on Delay Time t d(on) 7 nS Turn-on Rise Time t r 5.3 nS Turn-Off Delay Time t d(off) 16 nS Turn-Off Fall Time t f V DD =10V,I D =3.6A V GS =4.5V,R GEN =6Ω 10 nS Total Gate Charge Q g 10 nC Gate-Source Charge Q gs 2.3 nC Gate-Drain Charge Q gd V DS =10V,I D =4.2A, V GS =4.5V 2.9 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode Forward Voltage (Note 3) V SD V GS =0V,I S =0.94A 0.8 1.2 V Diode Forward Current (Note 2) I S 4.5 A
www.godark.com Page 3 of 8 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production testing.
www.godark.com Page 6 of 8 Rev.1.0 r(t),Normalized Effective Transient Thermal Impedance Square Wave Pulse Duration(sec) Figure 10: Normalized Maximum Transient Thermal Impedance
www.godark.com Page 7 of 8 Rev.1.0 Mechanical Data SOT23-3 Dimensions in Millimeters (UNIT:mm) NOTES： 1. Tolerance ±0.10mm (4 mil) unless otherwise specified 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
www.godark.com Page 8 of 8 Rev.1.0 Ordering and Marking Information Device Marking: S25 Package (Available) SOT23-3 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box SOT23-3 3000pcs 10pcs 30000pcs 4pcs 120000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ or 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 150 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices