SSF2145CH6 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 5 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Max. Symbol Parameter N-channel P-channel Units I D @ TC = 25°C Continuous Drain Current, V GS @ 4.5V① 4.8 -2.9 I D @ TC = 100°C Continuous Drain Current, V GS @ 4.5V① 3.9 -2.4 I DM Pulsed Drain Current② 17 -11 A P D @TC = 25°C Power Dissipation③ 1.7 1.7 W V DS Drain-Source Voltage 20 -20 V V GS Gate-to-Source Voltage ± 8 ± 8 V T J T STG Operating Junction and Storage Temperature Range -55 to + 150 -55 to + 150 Thermal Resistance Max. Symbol Characteristics Typ. N-channel P-channel Units Junction-to-ambient (t ≤ 10s) ④ — 76 114 ℃/W N-Ch P-Ch V DSS 20V -20V R DS(on) (typ.) 38mohm 64mohm I D 4.8A 2.9A TSOP-6 Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for load switching and buttery protection applications  150 ℃ operating temperature Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in load switching and a wide variety of other applications. 2145C

www.goodark.com Page 2 of 5 Rev.1.0 Junction-to-Ambient (PCB mounted, steady-state) ④ — 53 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions 20 — — V GS = 0V, ID = 250μA N-channel 22 — — T J = 125°C -20 — — V GS = 0V, ID = -250μA V (BR)DSS Drain-to-Source breakdown voltage P-channel -22 — — V T J = 125°C N-channel — 38 55 V GS =4.5V,I D = 3.6A P-channel 68 80 V GS =-4.5V,I D = -3A N-channel 64 75 V GS =2.5V,I D = 3.1A R DS(on) Static Drain-to-Source on-resistance P-channel 89 100 mΩ V GS =-3.5V,I D = -2A N-channel 0.4 0.72 1 V DS = V GS , I D = 250μA P-channel 0.4 0.56 1 T J = 125°C N-channel -0.4 -0.78 -1 V DS = V GS , I D = -250μA V GS(th) Gate threshold voltage P-channel -0.4 -0.66 -1 V T J = 125°C N-channel — — 1 V DS = 20V,V GS = 0V I DSS Drain-to-Source leakage current P-channel — — -1 μA V DS = -20V,V GS = 0V N-channel 100 V GS =8V N-channel -100 V GS = -8V P-channel 100 V GS =8V I GSS Gate-to-Source forward leakage P-channel -100 nA V GS = -8V Ciss Input capacitance N-channel — 348 420 Coss Output capacitance N-channel — 58 70 Crss Reverse transfer capacitance N-channel — 32 39 VGS = 0V, VDS = 10V, ƒ = 1.0MHz Ciss Input capacitance P-channel 519 622 Coss Output capacitance P-channel 75 90 Crss Reverse transfer capacitance P-channel 58 70 pF VGS = 0V, VDS = -10V, ƒ = 1.0MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions N-channel — — 4.8 I S Continuous Source Current (Body Diode) P-channel — — -2.9 A N-channel — — 17 MOSFET symbol showing the integral reverse p-n junction diode. I SM Pulsed Source Current (Body Diode) P-channel — — -11 A V SD Diode Forward N-channel — 0.69 1.2 V I S =0.94A, V GS =0V

www.goodark.com Page 3 of 5 Rev.1.0 Voltage P-channel — -0.72 -1.2 I S =-0.75A, V GS =0V Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 4 of 5 Rev.1.0 Mechanical Data Notes： ① Dimensions are inclusive of plating ② Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils ③ Dimension L is measured in gauge plane. ④ Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. Millimeters SYMBOL MIN MAX A 0.90 1.10 A1 0.10 b 0.30 0.50 c 0.08 0.20 D 2.70 3.10 E 2.60 3.00 E1 1.40 1.80 e 0.95 BSC L 0.35 0.55

www.goodark.com Page 5 of 5 Rev.1.0 Ordering and Marking Information Device Marking: 2145C Package (Available) TSOP-6 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box TSOP-6 3000pcs 10pcs 30000pcs 4pcs 120000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ or 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 150 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices