SSF2129H3 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 6 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① -6 I DM Pulsed Drain Current② -24 A Power Dissipation③ 2.0 W P D @TC = 25°C Linear Derating Factor 0.016 W/°C V DS Drain-Source Voltage -20 V V GS Gate-to-Source Voltage ±8 V T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 40 ℃/W R θJA Junction-to-ambient (t ≤ 10s) ④ — 78 ℃/W V DSS -20V R DS (on) 21mΩ (typ.) I D -6.0A SOP-8 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. D1 D2 S1 S2

www.goodark.com Page 2 of 6 Rev.1.0

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage -20 — — V V GS = 0V, ID = -250μA — 21 30 mΩ V GS =-4.5V,I D = -6A R DS(on) Static Drain-to-Source on-resistance — 33 40 mΩ V GS =-2.5V,I D = -5.3A V GS(th) Gate threshold voltage -0.4 — -1.5 V V DS = V GS , I D = -250μA — — 1 V DS = -20V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125℃ 100 V GS =8V I GSS Gate-to-Source forward leakage -100 nA V GS = -8V Q g Total gate charge — Q gs Gate-to-Source charge — 4.2 Q gd Gate-to-Drain("Miller") charge — 5.6 nC I D = -6A, V DS =-10V, V GS =-5V t d(on) Turn-on delay time — 8.1 t r Rise time — 15.2 t d(off) Turn-Off delay time — t f Fall time — ns V GS =-4.5V, VDS=-10V, I D = -1A, R GEN =6Ω C iss Input capacitance — 2819 C oss Output capacitance — 262 C rss Reverse transfer capacitance — 196 pF V GS = 0V V DS = -10V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — -6 A I SM Pulsed Source Current (Body Diode) — — -24 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — -1.0 V I S =-2.9A, V GS =0V D G S

www.goodark.com Page 3 of 6 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max junction temperature. ③The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ④These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C. Gate charge test circuit: Switching time test circuit: EAS test circuit:

www.goodark.com Page 5 of 6 Rev.1.0 Mechanical Data SOP8 PACKAGE OUTLINE DIMENSION

www.goodark.com Page 6 of 6 Rev.1.0 Ordering and Marking Information Device Marking: SSF2129H3 Package (Available) SOP-8 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box SOP-8 2500 2 5000 8 40000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ or 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 150 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices