SSF2122E GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 8 Rev.1.0 Main Product Characteristics V DSS 20V R DS (on) 15.2mohm(typ.) I D Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V(Silicon Limited) 7 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 5 I DM Pulsed Drain Current A P D @TC = 25°C Power Dissipation 1.4 W V DS Drain-Source Voltage 20 V V GS Gate-to-Source Voltage ± 12 V T J T STG Operating Junction and Storage Temperature Range -55 to + 150 °C Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. DFN 3x3-8L

www.goodark.com Page 2 of 8 Rev.1.0

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 20 — — V V GS = 0V, I D = 250μA — 15.2 23 V GS =4.5V,I D = 4A — 15.9 24 V GS =4V,I D =4A — 17.6 30 V GS =3.1V,I D =4A R DS(on) Static Drain-to-Source on-resistance — 20.8 35 mΩ V GS =2.5V,I D =2A 0.5 — 1 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 0.30 — V T J = 125℃ I DSS Drain-to-Source leakage current — — 1 μA V DS = 20V,V GS = 0V 10 V GS =8V I GSS Gate-to-Source forward leakage -10 μA V GS = -8V Q g Total gate charge — 24.1 Q gs Gate-to-Source charge — 1.4 Q gd Gate-to-Drain("Miller") charge — 4.2 nC I D = 7A, V DS =10V, V GS = 10V t d(on) Turn-on delay time — 5.3 t r Rise time — 18.2 t d(off) Turn-Off delay time — t f Fall time — nS V GS =4V, V DS =10V, R L =2.86Ω,I D = 3.5A C iss Input capacitance — 681 C oss Output capacitance — 124 C rss Reverse transfer capacitance — 117 pF V GS = 0V, V DS =10V, ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 7 A I SM Pulsed Source Current (Body Diode) — — 42 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.7 1.2 V I S =1.5A, V GS =0V t rr Reverse Recovery Time — 34.3 — nS Q rr Reverse Recovery Charge — 10.2 — nC T J = 25°C, I F =7A, di/dt = 100A/μs

www.goodark.com Page 3 of 8 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes: ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max junction temperature. ③The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ④These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C.

www.goodark.com Page 6 of 8 Rev.1.0 Typical Electrical and Thermal Characteristics Figure9. Maximum Drain Current Vs. Case Temperature Figure10. Forward Current Vs. Diode Forward Voltage Figure11. Power Dissipation Vs. Case Temperature

www.goodark.com Page 7 of 8 Rev.1.0 Mechanical Data DFN3×3-8L PACKAGE OUTLINE DIMENSION: MIN NOM MAX MIN NOM MAX A .700 .80 0.900 .0276 .0315 .0354 .00 .05 .000 .002 b .24 .30 .35 .009 .012 .014 c .08 .152 .25 .003 .006 .010 D E e L .20 .375 .450 .008 .0148 .0177 L1 0 .100 .004 θ1 0° 10° 12° 0° 10° 12° Dim. .90 BSC

114 BSC

2.80 BSC

2.30 BSC

0.65 BSC

0.110 BSC

0.091 BSC

0.026 BSC

www.goodark.com Page 8 of 8 Rev.1.0 Ordering and Marking Information Device Marking: 2122E Package (Available) DFN 3x3-8L Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box DFN 3x3-8L 3000pcs 4pcs 12000pcs 4pcs 48000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) Tj=125℃ to 150 ℃ @ 80% of Max V DSS CES R 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) Tj=150℃@ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices