SSF2101 SECOS | Alldatasheet
Document overview
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Technical content
-1.4A, -20V , R DS(O/glyph1197) 100 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 08-Feb-2017 Rev. A Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSF2101 provides the designers with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. SµT-323 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
/circle6 Lower Gate Charge /circle6 Simple Drive Requirement /circle6 Fast Switching Characteristic /circle6 Leading Trench Technology for Low RDS(µN) Extending Battery Life MARKING
PACKAGE INFORMATION
SµT-323 3K 7 inch ABSOLUTE MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current I D -1.4 A Pulsed Drain Current @ tp=10us I DM -3 A Maximum Power Dissipation P D 0.29 mW Thermal Resistance from Junction to Ambient RθJA 431 °C / W µperating Junction and Storage Temperature TJ, T STG 150, -55~150 °C SOT-323 TS1 Top View A L C B D G H JF K E 1 2 A 1.80 3.00 G 0.1 REF. B 1.80 2.55 H 0.525 REF. C 1.1 1.4 J 0.05 0.25 D 0.80 1.15 K 0.8 TYP. E 1.20 2.00 L 0.65 TYP. F 0.15 0.50
-1.4A, -20V , R DS(O/glyph1197) 100 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 08-Feb-2017 Rev. A Page 2 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Static Characteristics Drain-Source Breakdown Voltage BV DSS -20 - - V V GS =0, I D= -250µA Gate-Threshold Voltage 1 V GS(th) -0.45 -0.7 - V V DS =VGS , I D= -250µA Gate-Source Leakage Current IGSS - - ±100 nA V DS =0, VGS = ±8V Drain-Source Leakage Current IDSS - - -1 µA V DS = -20V, V GS =0 - - 140 V GS = -2.5V, I D= -0.5A Static Drain-Source µn-Resistance 1 R DS(µN) - - 210 mΩ VGS = -1.8V, I D= -0.3A Charges and Capacitances Input Capacitance C iss - 640 - µutput Capacitance C oss - 120 - Reverse Transfer Capacitance C rss - 82 - pF VDS = -8V VGS =0 f=1MHz Switching Characteristics - 5.5 - ID= -3A VDS = -10V VGS = -4.5V Total Gate Charge Q g - 3.3 - Gate-Source Charge Q gs - 0.7 - Gate-Drain Charge Q gd - 1.3 - nC ID= -3A VDS = -10V VGS = -2.5V Turn-on Delay Time T d(on) - 6.2 - Rise Time T r - 15 - Turn-off Delay Time T d(off) - 26 - Fall Time T f - 18 - nS VDD= -4V VGS= -4.5V RG =6.2Ω ID= -1A Drain-Source Diode Characteristics Diode Forward Voltage V SD - -0.62 -1.2 V I S= -0.3A, V GS =0 Notes: 1. Pulse Test: Pulse width≤300µs, duty cycle≤0.5%.
-1.4A, -20V , R DS(O/glyph1197) 100 m ΩΩ ΩΩ P-Channel Enhancement Mode Power MOSFET 08-Feb-2017 Rev. A Page 3 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES