SSF20N60H GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.3 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 20 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 13 I DM Pulsed Drain Current② 80 A Power Dissipation③ 208 W P D @TC = 25°C Linear Derating Factor 1.66 W/°C V DS Drain-Source Voltage 600 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=32mH 400 mJ I AS Avalanche Current @ L=32mH 5 A T J T STG Operating Junction and Storage Temperature Range -55 to + 150 °C V DSS 600V R DS (on) 0.2ohm(typ.) I D 20A TO 247 Marking and Pin Assignment Schematic Diagram  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product The SSF20N60H series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low R DS (ON) , energy saving, high reliability and uniformity, superior power density and space saving.

www.goodark.com Page 2 of 7 Rev.1.3 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 0.6 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 600 — — V V GS = 0V, ID = 250μA — 0.2 0.3 V GS =10V,I D = 13A R DS(on) Static Drain-to-Source on-resistance — 0.55 — Ω T J = 125°C 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.4 — V T J = 125°C — — 1 V DS =600V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 90 — Q gs Gate-to-Source charge — 12 — Q gd Gate-to-Drain("Miller") charge — 34 — nC I D = 20A, V DS =480V, V GS = 10V t d(on) Turn-on delay time — t r Rise time — t d(off) Turn-Off delay time — t f Fall time — ns V GS =10V, VDS=380V, R L =38Ω, R GEN =4.7Ω ID=10A C iss Input capacitance — 2334 C oss Output capacitance — 856 C rss Reverse transfer capacitance — pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 20 A I SM Pulsed Source Current (Body Diode) — — 80 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.2 V I S =20A, V GS =0V t rr Reverse Recovery Time — 480 — ns Q rr Reverse Recovery Charge — — nC T J = 25°C, I F =20A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.3 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C. ⑥ The maximum current rating is limited by bond-wires.

www.goodark.com Page 6 of 7 Rev.1.3 Mechanical Data TO247 PACKAGE OUTLINE DIMENSION Min. Max. Min. Max. A 19.81 20.81 0.78 0.819 B 20.8 21.46 0.819 0.845 C 15.57 16.26 0.61 0.64 D 3.55 3.65 0.14 0.144 E 4.32 5.49 0.17 0.216 F 5.4 6.2 0.212 0.244 G 1.65 2.13 0.065 0.084 H ― 4.5 ― 0.177 J 1 1.4 0.04 0.055 K 10.8 11 0.426 0.433 L 4.7 5.3 0.185 0.209 M 0.4 0.8 0.016 0.031 N 1.5 2.49 0.087 0.102 Millimeter InchesDim.

www.goodark.com Page 7 of 7 Rev.1.3 Ordering and Marking Information Device Marking: SSF20N60H Package (Available) TO247 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO247 30 8 240 5 1200 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ or 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices