SSF20K8NE-C SECOS | Alldatasheet

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Technical content

0.8A, 20V , R DS(ON) 350mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 13-Jun-2018 Rev. C Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

FEATURES

/circle6 20V/800mA R DS(ON) ≦350m Ω@V GS =4.5V R DS(ON) ≦660m Ω@V GS =2.5V R DS(ON) ≦1200m Ω@V GS =1.8V /circle6 Reliable and Rugged /circle6 Green Device Available /circle6 ESD Protection MARKING

PACKAGE INFORMATION

(T A=25° C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V Continuous Drain Current @V GS =4.5V 1 TA=25° C ID 0.8 A TA=70° C 0.64 Pulsed Drain Current 3 IDM 3.2 A Total Power Dissipation T A=25° C P D 340 mW Operating Junction and Storage Temperature Range T J, T STG -55~150 ° C Thermal Resistance Ratings Maximum Thermal Resistance from Junction-Ambient 1 R θJA 367 ° C/W Maximum Thermal Resistance from Junction-Ambient 2 625 Maximum Thermal Resistance from Junction-Case R θJC 250 Part Number Type SSF20K8NE-C Lead (Pb)-free and Halogen-free SOT-323 34K Top View A L C B D G H JF K E 1 2 Top View ƒ[ƒ[ ƒ[ƒ[ ƒ\\ƒ\\ ƒ\\ƒ\\ ƒ]ƒ] ƒ]ƒ] REF. Millimeter REF. Millimeter Min. Max. Min. Max. A 1.80 2.20 G 0.1 REF. B 1.80 2.55 H 0.525 REF. C 1.1 1.4 J 0.05 0.25 D 0.80 1.15 K 0.8 TYP. E 1.20 2.00 L 0.65 TYP. F 0.15 0.50

0.8A, 20V , R DS(ON) 350mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 13-Jun-2018 Rev. C Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J=25° C Unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS 20 - - V V GS =0, I D =250 µA Gate Threshold Voltage V GS(th) 0.45 - 1 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±10 µA V GS = ±10V Drain-Source Leakage Current(T J=25° C) IDSS - - 1 µA V DS =20V, V GS =0 Drain-Source Leakage Current(T J=70° C) - - 25 µA V DS =16V, V GS =0 Static Drain-Source On-Resistance 4 R DS(ON) - - 350 m Ω VGS =4.5V, I D =650mA - - 660 V GS =2.5V, I D =500mA - - 1200 V GS =1.8V, I D =450mA Total Gate Charge Q g - 1.3 - nC IDS =0.5A VDS =15V VGS =4.5V Gate-Source Charge Q gs - 0.5 - Gate-Drain (“Miller”) Charge Q gd - 0.1 - Turn-on Delay Time T d(on) - 2.6 - nS VDD =10V IDS =0.5A VGS =10V R GEN =1 Ω Rise Time T r - 16 - Turn-off Delay Time T d(off) - 29.8 - Fall Time Tf - 11 - Input Capacitance C iss - 64 - pF VGS =0 VDS =10V f=1MHz Output Capacitance C oss - 17 - Reverse Transfer Capacitance C rss - 20 - Source-Drain Diode Continuous Source Current 1 IS - - 0.8 A Pulsed Source Current 3 ISM - - 3.2 A Diode Forward Voltage 4 V SD - - 1 V I S=150mA, VGS =0 Reverse Recovery Time t rr - 4.9 - nS IF=0.5A, dI/dt=100A/ µs TJ=25° C Reverse Recovery Charge Q rr - 1 - nC Notes: 1. Surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. Surface mounted on FR4 board using the minimum recommended pad size. 3. Pulse width limited by maximum junction temperature., Pw ≦300 µs, Duty cycle ≦1%. 4. The data tested by pulsed, pulse width ≦300µs, duty cycle ≦2%.

0.8A, 20V , R DS(ON) 350mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 13-Jun-2018 Rev. C Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

0.8A, 20V , R DS(ON) 350mΩ N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente 13-Jun-2018 Rev. C Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES