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www.silikron.com Main Product Characteristics: Features and Benefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 1 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 0.75 IDM Pulsed Drain Current ② 4 PD @TC = 25°C Power Dissipation③ 44 W Linear Derating Factor 0.36 W/°C VDS Drain-Source Voltage 800 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=100mH 50 mJ IAS Avalanche Current @ L=100mH 1 A TJ T STG Operating Junction and Storage Te mperature Range -55 to + 150 °C VDSS 800V RDS(on) 13 Ω (typ.) ID 1A TO-252 Marking and pin Assignment Schematic diagram Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150 ℃ operating temperature It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 2.78 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 100 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 800 — — V V GS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 13 16 Ω VGS=10V,ID = 0.5A — 18 — T J = 125℃ VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — 2.0 — T J = 125℃ IDSS Drain-to-Source leakage current — — 1 μA VDS = 800V,VGS = 0V — — 50 T J = 125℃ IGSS Gate-to-Source forward leakage — — 100 nA VGS =30V — — -100 V GS = -30V Qg Total gate charge — 8.9 — nC ID = 1A, VDS=640V, VGS = 10V Qgs Gate-to-Source charge — 2.1 — Qgd Gate-to-Drain("Miller") charge — 3.3 — td(on) Turn-on delay time — 8.1 — ns VGS=10V, VDS=400V, RL=44Ω, RGEN=25Ω ID=1A tr Rise time — 29 — td(off) Turn-Off delay time — 19 — tf Fall time — 40 — Ciss Input capacitance — 220 — pF VGS = 0V VDS = 25V ƒ = 1MHz Coss Output capacitance — 15 — Crss Reverse transfer capacitance — 2 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 1 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 4 A VSD Diode Forward Voltage — 1.2 1.5 V I S=1A, VGS=0V trr Reverse Recovery Time — 362 — ns TJ = 25°C, IF =1A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 798 — nC
www.silikron.com Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. Repetitive rating; pulse width limited by max. junction temperature.② ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C
www.silikron.com Mechanical Data： Min Nom Max Min Nom Max A 2.200 - 2.400 0.087 - 0.094 B 0.950 - 1.250 0.037 - 0.049 b 0.500 - 0.700 0.020 - 0.028 b1 0.450 - 0.550 0.018 - 0.022 C 0.450 - 0.550 0.018 - 0.022 D 6.450 - 6.750 0.254 - 0.266 D1 5.200 - 5.400 0.205 - 0.213 E 5.950 - 6.250 0.234 - 0.246 e1 2.240 - 2.340 0.088 - 0.092 e2 4.430 - 4.730 0.174 - 0.186 L1 9.450 - 9.950 0.372 - 0.392 L2 1.250 - 1.750 0.049 - 0.069 L3 0.600 - 0.900 0.024 - 0.035 K 0.000 - 0.100 0.000 - 0.004 Symbol Dimension In Millimeters Dimension In Inches TO‐252 PACKAGE OUTLINE DIMENSION
www.silikron.com Ordering and Marking Information Device Marking: SSF1N80D Package (Available) TO-252（DPAK） Operating Temperature Range C : -55 to 150 ºC Devices per Unit（options） Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j=125℃ to 150℃ @ 80% of Max V DSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j=150℃@ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices Tapes/Inner Units/Inne r Inner Units/Carton Box Box Boxes/Carton Box Box TO-252 2500 2 5000 7 35000 TO-252 2500 1 2500 10 25000 TO-252 800 5 4000 8 32000 Package Type Units/Tape
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