SSF15NS65UEF SILIKRON | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 7
Technical content
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.0 page 1 of 7 Main Product Characteristics: Features and Benefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25° C Continuous Drain Current, VGS @ 10V ① 15 A ID @ TC = 100° C Continuous Drain Current, VGS @ 10V ① 9.5 IDM Pulsed Drain Current ② 45 PD @TC = 25° C Power Dissipation ③ 32 W VDS Drain-Source Voltage 650 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=20mH 382 mJ IAS Avalanche Current @ L=20mH 6.2 A TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 °C VDSS 650V RDS(on) 0.23Ω (typ.) ID 15A TO-220F Marking and Pin Assignments Schematic Diagram Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.0 page 2 of 7 Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 3.9 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62.5 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 650 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 0.23 0.29 Ω VGS=10V,ID = 7.5A VGS(th) Gate threshold voltage 2.7 — 3.7 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS = 650V,VGS = 0V IGSS Gate-to-Source forward leakage — — 100 nA VGS =30V Ciss Input capacitance — 1184 — pF VGS = 0V VDS = 100V ƒ = 100kHz Coss Output capacitance — 47 — Crss Reverse transfer capacitance — 1.65 — Qg Total gate charge — 20 — nC ID = 8A, VDS=400V, VGS = 10V Qgs Gate-to-Source charge — 5 — Qgd Gate-to-Drain("Miller") charge — 7 — td(on) Turn-on delay time — 25 — nS VGS=10V, VDD =300V, RGEN=10Ω,ID =15A tr Rise time — 39 — td(off) Turn-Off delay time — 65 — tf Fall time — 38 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 15 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 45 A VSD Diode Forward Voltage — — 1.3 V IS=15A, VGS=0V trr Reverse Recovery Time — 260 — nS TJ = 25° C, IF =8A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 3 — uC
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.0 page 3 of 7 Test Circuits and Waveforms EAS Test Circuit: Gate Charge Test Circuit: Switching Time Test Circuit: Switching Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.0 page 5 of 7 Typical electrical and thermal characteristics Figure7. Normalized VGS(th) vs. Junction Temperature Figure8. Drain-to-Source On-state Resistance Figure9. Drain Current Figure10. Threshold Voltage Figure11. Transient Thermal Impedance Figure12.Safe Operation Area
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.0 page 6 of 7 Mechanical Data：
©Silikron Microelectronics (Suzhou) Co.,Ltd www.silikron.com Version: 1.0 page 7 of 7 ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Microelectronics (Suzhou) Co.,Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Microelectronics (Suzhou) Co.,Ltd. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use.