SSF1504D GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.2.1 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 6 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 4 I DM Pulsed Drain Current② 20 A Power Dissipation③ 24 W P D @TC = 25°C Linear Derating Factor 0.16 W/°C V DS Drain-Source Voltage 150 V V GS Gate-to-Source Voltage ± 20 V T J T STG Operating Junction and Storage Temperature Range -55 to + 175 °C V DSS 150V R DS (on) 0.3Ω(typ) I D DP AK Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.2.1 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 6.25 ℃/W Junction-to-Ambient (t ≤ 10s) ④ — 100 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage

150 V V

= 0V, ID = 250μA — 0.3 0.35 V GS =10V,I D = 3A R DS(on) Static Drain-to-Source on-resistance — 0.7 — Ω T J = 125℃ 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.8 — V T J = 125℃ — — 1 V DS = 150,Vgs=10V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C Gate-to-Source forward leakage 100 V GS =20V I GSS Gate-to-Source reverse leakage -100 nA V GS = -20V Q g Total gate charge Q gs Gate-to-Source charge Q gd Gate-to-Drain("Miller") charge nC I D = 6A V DD =120V V GS = 10V t d(on) Turn-on delay time t r Rise time t d(off) Turn-Off delay time t f Fall time ns VGS=10V, VDD=24.6V, R L =8.2Ω, R GEN =2.55Ω ID=3.00A C iss Input capacitance 759 C oss Output capacitance C rss Reverse transfer capacitance pF V GS = 0V V DS = 25V ƒ = 800KHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 6 A I SM Pulsed Source Current (Body Diode) — — 24 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage 0.82 1.5 V I S =6.00A, V GS =0V,T J = 25°C t rr Reverse Recovery Time 90 ns Q rr Reverse Recovery Charge 105 nC T J = 25°C, I F =6.00A, di/dt = 25.0A/μs

www.goodark.com Page 3 of 7 Rev.2.1 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C. ⑥ The maximum current rating is limited by bond-wires.

www.goodark.com Page 6 of 7 Rev.2.1 Mechanical Data Min Nom Max Min Nom Max K Symbol Dimension In Millimeters Dimension In Inches 4.83 (REF) 0.190 (REF) 5.350 (REF) 2.900 (REF) 1.600 (REF) (REF) 8 (REF) 0.063 (REF) 0.211 (REF) 0.114 (REF) DPAK PACKAGE OUTLINE DIMENSION_CD

www.goodark.com Page 7 of 7 Rev.2.1 Ordering and Marking Information Device Marking: SSF1504D Package (Available) DPAK Operating Temperature Range C : -55 to 175 ºC Devices per Unit Packag e Type Units/Tu be Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box DPAK 80 50 4000 10 40000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ or 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices