SSF1502G5 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V 6 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V 4.2 I DM Pulsed Drain Current A Power Dissipation 12 W P D @TC = 25°C Linear Derating Factor 0.08 W/°C V DS Drain-Source Voltage 150 V V GS Gate-to-Source Voltage ± 20 V T J T STG Operating Junction and Storage Temperature Range -55 to + 175 °C V DSS 150V R DS (on) 0.14Ω(typ) I D SOT223 Marking and Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  175 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case — 13 ℃/W Junction-to-Ambient (t ≤ 10s) — 62 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 150 — — V V GS = 0V, I D = 250μA — 0.14 0.2 V GS =10V,I D = 2.8A R DS(on) Static Drain-to-Source on-resistance — 0.32 — Ω T J = 125°C 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.63 — V T J = 125°C — — 1 V DS =120V, V GS =0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C Gate-to-Source forward leakage — 100 V GS =20V I GSS Gate-to-Source reverse leakage -100 nA V GS = -20V Q g Total gate charge — 30.9 — Q gs Gate-to-Source charge — 6.5 — Q gd Gate-to-Drain("Miller") charge — 10.6 — nC I D = 2.8A V DD =75V V GS = 10V t d(on) Turn-on delay time — 11.8 — t r Rise time — 5.7 — t d(off) Turn-Off delay time — 29.3 — t f Fall time — 6.0 — nS V GS =10V, V DS =75V, R L =26Ω, R GEN =6Ω I D =2.8A C iss Input capacitance — 1230 — C oss Output capacitance — 47 — C rss Reverse transfer capacitance — 31 — pF V GS = 0V V DS = 75V ƒ =1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 6 A I SM Pulsed Source Current (Body Diode) — — 24 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.81 1.5 V I S =2.8A, V GS =0V,T J = 25°C t rr Reverse Recovery Time — 54.8 — nS Q rr Reverse Recovery Charge — 133.9 — nC T J = 25°C, I F =2.8A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =175°C.

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data SOT223 PACKAGE OUTLINE DIMENSION:

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: 1502G5 Package (Available) SOT223 Operating Temperature Range C : -55 to 175 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box SOT223 3000 10 30000 4 120000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 175 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ or 175 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices