SSF1320N SECOS | Alldatasheet
Document overview
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Technical content
2A , 20V , R DS(ON) 58 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 28-Aug-2012 Rev. A Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low R DS(ON) and to ensure minimal power loss and heat dissipation.
FEATURES
/circle6 Low R DS(on) provides higher efficiency and extends battery life. /circle6 Low gate charge /circle6 Fast switch /circle6 Miniature SOT-323 surface mount package saves board space. APPLICATION DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
PACKAGE INFORMATION
(T A = 25 °C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current 1 TA=25 °C ID 2 A TA=70 °C 1.7 A Pulsed Drain Current 2 IDM ±20 A Continuous Source Current (Diode Conduction) 1 I S 1.6 A Power Dissipation 1 TA=25 °C PD 0.34 W TA=70 °C 0.22 W Operating Junction and Storage Temperature Range TJ, T STG -55~150 °C Thermal Resistance Ratings Maximum Junction to Ambient 1 t ≦ 5 sec R θJA 100 °C / W Steady State 166 Notes: 1 Surface Mounted on 1” x 1” FR4 Board. 2 Pulse width limited by maximum junction temperature. SOT-323 Top View A L C B D G H JF K E 1 2 REF. Millimeter REF. M illimeter Min. Max. Min. Max. A 1.80 2.20 G 0.1 REF. B 1.80 2.45 H 0.525 REF. C 1.1 1.4 J 0.08 0.25 D 0.80 1.10 K 0.8 TYP. E 1.20 1.40 L 0.65 TYP. F 0.15 0.40
2A , 20V , R DS(ON) 58 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 28-Aug-2012 Rev. A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS
(T A = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) 0.7 - - V V DS =V GS , I D =250uA Gate-Body Leakage I GSS - - ±100 nA V DS =0, V GS = ±8V Zero Gate Voltage Drain Current IDSS - - 1 uA VDS =16V, V GS =0 - - 10 V DS =16V, V GS =0, T J=55 °C On-State Drain Current 1 I D(on) 10 - - A V DS =5V, V GS =4.5V Drain-Source On-Resistance 1 R DS(ON) - - 58 m Ω VGS =4.5V, I D =2A - - 82 V GS =2.5V, I D =1.7A Forward Transconductance 1 g fs - 11.3 - S V DS =10V, I D =2A Diode Forward Voltage V SD - 0.75 - V I S=1.6A, V GS =0 Dynamic 2 Input Capacitance C iss - 720 - pF VDS =15V, VGS =0, f=1 MHz Output Capacitance C oss - 165 - Reverse Transfer Capacitance C rss - 60 - Total Gate Charge Q g - 7.5 - nC VDS =10V, VGS =4.5V, ID =2A Gate-Source Charge Q gs - 0.6 - Gate-Drain Charge Q gd - 1 - Turn-on Delay Time T d(on) - 8 - nS VDD =10V, VGEN =4.5V, R L=15 Ω, ID =1A Rise Time T r - 24 - Turn-off Delay Time T d(off) - 35 - Fall Time T f - 10 - Notes: 1 Pulse test ：PW ≦ 300 us duty cycle ≦ 2%. 2 Guaranteed by design, not subject to production testing.
2A , 20V , R DS(ON) 58 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 28-Aug-2012 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE
2A , 20V , R DS(ON) 58 mΩΩ ΩΩ N-Channel Enhancement Mode MOSFET Elektronische Bauelemente 28-Aug-2012 Rev. A Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE