SSF12N60F GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.1 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 12 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 7.4 I DM Pulsed Drain Current② 48 A Power Dissipation③ 50 W P D @TC = 25°C Linear Derating Factor 0.4 W/°C V DS Drain-Source Voltage 600 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=6.36mH 458 mJ I AS Avalanche Current @ L=6.36mH 12 A T J T STG Operating Junction and Storage Temperature Range -55 to + 150 °C V DSS 600V R DS (on) 0.55Ω (typ.) I D 12A TO220F Marking and Pin Assignment Schematic Diagram  Advanced Process T echnology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product These N-Channel enhancement mode power field effect transistors are produced using proprietary MOSFET technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

www.goodark.com Page 2 of 7 Rev.1.1 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 2.5 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 600 — — V V GS = 0V, I D = 250μA — 0.55 0.7 V GS =10V,I D = 6A R DS(on) Static Drain-to-Source on-resistance — 1.25 — Ω T J = 125℃ 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 1.84 — V T J = 125℃ — — 1 V DS = 600V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125℃ 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 55.1 — Q gs Gate-to-Source charge — 10.4 — Q gd Gate-to-Drain("Miller") charge — 19.9 — nC I D = 10A, V DS =400V, V GS = 10V t d(on) Turn-on delay time — 40.6 — t r Rise time — 37.8 — t d(off) Turn-Off delay time — 349 — t f Fall time — 72.5 — nS V GS =10V, V DS =200V, R L =40Ω, R GEN =50Ω I D =5A C iss Input capacitance — 2151 — C oss Output capacitance — 184 — C rss Reverse transfer capacitance — 8.1 — pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 12 A I SM Pulsed Source Current (Body Diode) — — 48 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.88 1.4 V I S =12A, V GS =0V t rr Reverse Recovery Time — 586 — nS Q rr Reverse Recovery Charge — 5122 — nC T J = 25°C, I F =10A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.1 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C

www.goodark.com Page 6 of 7 Rev.1.1 Mechanical Data Min Nom Max Min Nom Max A1 0.276 0.000 0.000 D ϴ Symbol Dimension In Millimeters Dimension In Inches 7.000 2.54 (TYP) 0.700 1.0*45 1.00 (TYP) 0.028 1.0*45 TO220F PACKAGE OUTLINE DIMENSION

www.goodark.com Page 7 of 7 Rev.1.1 Ordering and Marking Information Device Marking: SSF12N60F Package (Available) TO220F Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO220F 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices