SSF1221J2

SSF1221J2 VBSEMI | Alldatasheet

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Technical content

P-Channel 20 V (D-S) MOSFET

FEATURES

• TrenchFET® Power MOSFET  Thermally Enhanced DFN2X2 Package - Small Footprint Area - Low On-Resistance

APPLICATIONS

 Load Switch, PA Switch, and Battery Switch for Portable Devices Notes: a. Package limited. b. Surface mounted on 1" x 1" FR 4 board. c. t = 5 s. See solder profile The DFN2X2 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guara nteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 80 °C/W. PRODUCT SUMMARY VDS (V) R DS(on) () (Max.) I D (A) Q g (Typ.) - 20 0.030 at VGS = - 4.5 V -10a 18 nC 0.040 at VGS = - 2.5 V -9a S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C , unless otherwise noted) Parameter Symbol Limit Unit Drain-Source V oltage VDS - 20 VGate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 10a A TC = 70 °C - 8a TA = 25 °C - 10b, c TA = 70 °C - 8b, c Pulsed Drain Current (t = 300 µs) IDM - 30 Continuous Source-Drain Diode Cu rrent TC = 25 °C IS - 10a TA = 25 °C - 2.5b, c Maximum P ower Dissipation TC = 25 °C PD WTC = 70 °C 11 TA = 25 °C 3.3b, c TA = 70 °C 2.1b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak T emperature)d, e 250 THERMAL RESISTANCE RATINGS Parameter Symb ol Typical Maximum Unit Maximum Junction-to-Ambientb, f t  5 s RthJA 28 38 °C/WMaximum Junction-to-Case (Drain) S teady State RthJC 5.6 7.5 DFN 2x2 Top View Bottom View Pin 1 D D G D D S D S Pin 1 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSF1221J2 A ll data sheet.com

Notes: a. Pu lse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed und er “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Paramet er Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient VDS/TJ ID = - 250 µA - 11 mV/°CVGS(th) Temperature Coefficient VGS(th)/TJ 2.7 Gate-Source Threshold V oltage VGS(th) VDS = VGS, ID = - 250 µA - 0.4 - 1 V Gate-S ource Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Vo ltage Drain Current IDSS VDS = - 12 V, VGS = 0 V - 1 µAVDS = - 12 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS - 5 V, VGS = - 4.5 V - 20 A Drain-Source On-State Resistancea RDS(on) VGS = - 4.5 V, ID = - 6.7 A 0.030 VGS = - 2.5 V, ID = - 6.2 A 0.040 VGS = - 1.8 V, ID = - 2.3 A 0.042 VGS = - 1.5 V, ID = - 1 A 0.050 Forward Tra nsconductancea gfs VDS = - 10 V, ID = - 6.7 A 30 S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 1600 pFOutput Capacitance Coss 430 Reverse Transf er Capacitance Crss 370 Total Gate Charge Qg VDS = - 6 V, VGS = - 8 V, ID = - 10 A 38 54 nCVDS = - 6 V, VGS = - 4.5 V, ID = - 10 A 23 33 Gate-Source Charge Qgs 3 Gate-Drain Charg e Qgd 6.5 Gate Resista nce Rg f = 1 MHz 7  Tur n-O n Delay Time td(on) VDD = - 6 V, RL = 0.75  ID  - 8 A, VGEN = - 4.5 V, Rg = 1  20 30 ns Rise Time tr 40 60 Turn-Off Dela y Time td(off) 65 100 Fall Time tf 40 60 Tur n- On Delay Time td(on) VDD = - 6 V, RL = 0.75  ID  - 8 A, VGEN = - 8 V, Rg = 1  10 15 Rise Time tr 12 20 Turn-Off Dela y Time td(off) 70 105 Fall Time tf 40 60 Drain-Source B ody Diode Characteristics Continuous Source-Drain Diode Current IS TC = 25 °C - 10 A Pulse Diode Forward C urrent ISM 30 Body Diode Voltage VSD IS = - 8 A, VGS = 0 V - 0.8 - 1.2 V Body Diode Reverse Recovery Time trr IF = - 8 A, di/dt = 100 A/µs, TJ = 25 °C 40 60 ns Body Diode Re verse Recovery Charge Qrr 20 30 nC Rev erse Recovery Fall Time ta 14 ns Reverse Recove ry Rise Time tb 26 0.034 0.043 0.046 0.055 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSF1221J2 A ll data sheet.com

TYPICAL CHARACTERISTICS (2 5 °C, unless otherwise noted) Output Characteristics On -Resistance vs. Drain Current and Gate Voltage Gate Charge VDS - Drain-to-Source Voltage (V) VGS = 5 thru 2.5 V - Drain Current (A)ID VGS = 1.5 V VGS = 1 V VGS = 2 V 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0 8 16 24 32 40 ID - Drain Current (A) - On-Resistance (Ω)RDS(on) VGS = 1.8 V VGS = 4.5 V VGS = 2.5 V 0 8 16 24 32 40 Qg - Total Gate Charge (nC) ID = 10 A - Gate-to-Source Voltage (V)VGS VDS = 9.6 V VDS = 6 V Transfer Characteristics Capacitance On -Resistance vs. Junction Temperature VGS - Gate-to-Source Voltage (V) TC = 25 °C - Drain Current (A)ID TC = 125 °C TC = - 55 °C Crss VDS - Drain-to-Source Voltage (V) 500 1000 1500 2000 2500 3000 0369 1 2 Coss Ciss C - Capacitance (pF) TJ - Junction Temperature (°C) 0.8 0.9 1.0 1.1 1.2 - 50 - 25 0 25 50 75 100 125 150 RDS(on) - On-Resistance (Normalized) VGS = 4.5 V, 2.5 V VGS = 4.5 V, 2.5 V ID = 6.7 A E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSF1221J2 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, un less otherwise noted) Soure-Drai n Diode Forward Voltage Threshold Voltage TJ = 150 °C VSD - Source-to-Drain Voltage (V) - Source Current (A)I S TJ = 25 °C 100 TJ - Temperature (°C) 0.2 0.3 0.4 0.5 0.6 0.7 0.8 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA (V)VGS(th) On-Resistance vs. Gate-to-Source Voltage Sing le Pulse Power, Junction-to-Ambient VGS - Gate-to-Source Voltage (V) 0.012 0.024 0.036 0.048 0.060 012345 - On-Resistance (Ω)RDS(on) ID = 6.7 A TA = 125 °C TA = 25 °C Power (W) Time (s) 10 10000.10.010.001 1001 Safe Operating Area, Junction -to-Ambient 0.1 1 10 100 0.01 1 ms - Drain Current (A)I D

0.1 TA = 25 °C

VDS - Drain-to-Source Voltage (V) * VGS minimum VGS at which RDS(on) is specified Limited by RDS(on)* 100 µs BVDSS Limited 100 100 ms 1 s 10 s E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSF1221J2 A ll data sheet.com

TYPICAL CHARACTERISTICS ( 25 °C, unless otherwise noted) * The po we r dissipation P D is based on T J(max) = 150 °C, using ju nct ion-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Current Derating* 0 25 50 75 100 125 150 ID - Drain Current (A) TC - Case Temperature (°C) Package Limited Power Derating 25 50 75 100 125 150 TC - Case Temperature (°C) Power Dissipation (W) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSF1221J2 A ll data sheet.com

TYPICAL CHARACTERISTICS (25 °C, un less otherwise noted) Normalized Thermal Transient Im pedance, Junction-to-Ambient 10-3 10-2 1 10 100010-110-4 100 0.2 0.1 0.05 0.02 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.1 0.01 Single Pulse Notes: PDM 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 80 C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Duty Cycle = 0.5 Normalized Thermal Transient Impedan ce, Junction-to-Case 10-3 10-210-4 0.1 0.2 0.1 Duty Cycle = 0.5 Square Wave Pulse Duration (s) Normalized Effective Transient Thermal Impedance 0.02 Single Pulse 0.05 10-1 E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSF1221J2 A ll data sheet.com

E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSF1221J2 A ll data sheet.com

RECOMMENDED PAD LAYOUT FOR DFN2X2 0.300 (0.012) 0.350 (0.014) 0.650 (0.026) 0.950 (0.037) 0.300 (0.012) 0.355 (0.014) 0.235 (0.009) 0.475 (0.019) 0.870 (0.034) 0.275 (0.011) 0.350 (0.014) 0.550 (0.022) 0.650 (0.026) Dimensions in mm/(Inches) E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSF1221J2 A ll data sheet.com

All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. Taiwan VBsemi Electronics Co., Ltd., branches, agents, employees, and all persons acting on its or their representatives (collectively, the "Taiwan VBsemi"), assumes no responsibility for any errors, inaccuracies or incomplete data contained in the table or any other any disclosure of any information related to the product.(www.VBsemi.tw) Taiwan VBsemi makes no guarantee, representation or warranty on the product for any particular purpose of any goods or continuous production. To the maximum extent permitted by applicable law on Taiwan VBsemi relinquished: (1) any application and all liability arising out of or use of any products; (2) any and all liability, including but not limited to special, consequential damages or incidental ; (3) any and all implied warranties, including a particular purpose, non-infringement and merchantability guarantee. Statement on certain types of applications are based on knowledge of the product is often used in a typical application of the general product VBsemi Taiwan demand that the Taiwan VBsemi of. Statement on whether the product is suitable for a particular application is non-binding. It is the customer's responsibility to verify specific product features in the products described in the specification is appropriate for use in a particular application. Parameter data sheets and technical specifications can be provided may vary depending on the application and performance over time. All operating parameters, including typical parameters must be made by customer's technical experts validated for each customer application. Product specifications do not expand or modify Taiwan VBsemi purchasing terms and conditions, including but not limited to warranty herein. Unless expressly stated in writing, Taiwan VBsemi products are not intended for use in medical, life saving, or life sustaining applications or any other application. Wherein VBsemi product failure could lead to personal injury or death, use or sale of products used in Taiwan VBsemi such applications using client did not express their own risk. Contact your authorized Taiwan VBsemi people who are related to product design applications and other terms and conditions in writing. The information provided in this document and the company's products without a license, express or implied, by estoppel or otherwise, to any intellectual property rights granted to the VBsemi act or document. Product names and trademarks referred to herein are trademarks of their respective representatives will be all. Material Category Policy Taiwan VBsemi Electronics Co., Ltd., hereby certify that all of the products are determined to be RoHS compliant and meets the definition of restrictions under Directive of the European Parliament 2011/65 / EU, 2011 Nian. 6. 8 Ri Yue restrict the use of certain hazardous substances in electrical and electronic equipment (EEE) - modification, unless otherwise specified as inconsistent.(www.VBsemi.tw) Please note that some documents may still refer to Taiwan VBsemi RoHS Directive 2002/95 / EC. We confirm that all products identified as consistent with the Directive 2002/95 / EC European Directive 2011/65 /. Taiwan VBsemi Electronics Co., Ltd. hereby certify that all of its products comply identified as halogen-free halogen-free standards required by the JEDEC JS709A. Please note that some Taiwanese VBsemi documents still refer to the definition of IEC 61249-2-21, and we are sure that all products conform to confirm compliance with IEC 61249-2-21 standard level JS709A. E-mail：China@VBsemi TEL:86-755-83251052 www.VBsemi.tw SSF1221J2 A ll data sheet.com