SSF1221J2_15 GOOD-ARK | Alldatasheet

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www.goodark.com Page 1 of 5 Rev.1.1 Main Product Characteristics Features and Benefits Description: Absolute Max Rating Symbol Parameter Max. Units I D @ T C = 25°C Continuous Drain Current, V GS @ 4.5V① -12 I D @ T C = 100°C Continuous Drain Current, V GS @ 4.5V① -7.4 I DM Pulsed Drain Current② -28 A P D C = 25°C Power Dissipation③ 2.4 W V DS Drain-Source Voltage -12 V V GS Gate-to-Source Voltage ± 8 V T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case 6.9 8 ℃/W R θJA Junction-to-ambient (t ≤ 10s) ④ 52 62.5 ℃/W V DSS -12V R DS (on) 14.4 mΩ(typ.) I D -12A DFN2x2-6L Pin Assignment Schematic Diagram  Advanced trench MOSFET process technology  Special designed for battery charge, load switching in cellular handset and general ultraportable applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in battery charge and load switching in cellular handset and a wide variety of other ultraportable applications.

www.goodark.com Page 2 of 5 Rev.1.1

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage -12 — — V V GS = 0V, ID = 250μA — 14.4 16 V GS =-4.5V, I D =-10A — 18.9 21 V GS =-2.5V, I D =-8.9A R DS(on) Static Drain-to-Source on-resistance — 26.4 38 mΩ V GS =-1.8V, I D =-4.5A V GS(th) Gate threshold voltage -0.4 — -1 V V DS = V GS , I D = 250μA I DSS Drain-to-Source leakage current — — -1 μA V DS = -12V,V GS = 0V 100 V GS = 8V I GSS Gate-to-Source forward leakage -100 nA V GS = -8V g FS Forward Transconductance -3 — — S V DS = -5V, I D =-10A Q g Total gate charge — 21 — Q gs Gate-to-Source charge — 2.5 — Q gd Gate-to-Drain("Miller") charge — 6 — nC I D = -10A, V DD =-6V, V GS = -4.5V t d(on) Turn-on delay time — 30 — t r Rise time — 48 — t d(off) Turn-Off delay time — 97 — t f Fall time — 65 — ns V GS =-4.5V, V DD =-6V, I D = -10A, R GEN =6Ω C iss Input capacitance — 2138 — C oss Output capacitance — 685 — C rss Reverse transfer capacitance — 650 — pF V GS = 0V V DS = -6V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — -12 A I SM Pulsed Source Current (Body Diode) — — -28 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — -0.77 -1.2 V I S =-2A, V GS =0V t rr Reverse Recovery Time — 16 — ns Q rr Reverse Recovery Charge — 5.9 — uC T J = 25°C, I F =-10A, di/dt = 100A/μs

www.goodark.com Page 3 of 5 Rev.1.1 Test Circuits and Waveforms Switch time test circuit: Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C.

www.goodark.com Page 4 of 5 Rev.1.1 Mechanical Data DFN 2 x 2-6L PACKAGE INFORMATION Notes ①Does not fully conform to JEDEC registration MO-229 dated Aug/2003. ②Dimensions are in millimeters. ③Dimensions and tolerances per ASME Y14.5M. 1994.

www.goodark.com Page 5 of 5 Rev.1.1 Ordering and Marking Information Device Marking: 1221 Package (Available) DFN 2 x 2-6L Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tape Tapes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box DFN2 x 2-6L 3000pcs 10pcs 15000pcs 4pcs 60000pcs Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ or 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =125℃ or 150 ℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices