SSF11NS65 SILIKRON | Alldatasheet

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www.silikron.com Main Product Characteristics: Features and Benefits: Description: Absolute max Rating: Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V① 11 A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 7 IDM Pulsed Drain Current ② 44 PD @TC = 25°C Power Dissipation③ 162 W Linear Derating Factor 1.5 W/°C VDS Drain-Source Voltage 680 V VGS Gate-to-Source Voltage ± 30 V EAS Single Pulse Avalanche Energy @ L=22.5mH 281 mJ IAS Avalanche Current @ L=22.5mH 5 A TJ T STG Operating Junction and Storage Te mperature Range -55 to + 150 °C VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A TO220 Marking and pin Assignment Schematic diagram Feathers: „ High dv/dt and aval anche capabilities „ 100% avalanche tested „ Low input capacitance and gate charge „ Low gate input resistance The SSF11NS65 series MOSFETs is a new technology. which combines an innovative super junction technology and advance process. this new techno logy achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.

www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 0.77 ℃/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 680 — — V V GS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 0.36 0.41 Ω VGS=10V,ID = 5.5A VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 1 μA VDS =650V,VGS = 0V — — 50 T J = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =30V -100 — — V GS = -30V Qg Total gate charge — 28.41 — nC ID = 11A, VDS=480V, VGS = 10V Qgs Gate-to-Source charge — 6.64 — Qgd Gate-to-Drain("Miller") charge — 12.34 — td(on) Turn-on delay time — 12.85 — ns VGS=10V, VDS=300V, RL=54.5Ω, RGEN=4.7Ω ID=5.5A tr Rise time — 9.45 — td(off) Turn-Off delay time — 30.40 — tf Fall time — 6.30 — Ciss Input capacitance — 824.8 — pF VGS = 0V VDS = 50V ƒ = 600KHz Coss Output capacitance — 78.06 — Crss Reverse transfer capacitance — 2.75 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 11 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 44 A VSD Diode Forward Voltage — — 1.5 V I S=11A, VGS=0V trr Reverse Recovery Time — 313 — ns TJ = 25°C, I F =11A, di/dt = 100A/μs Qrr Reverse Recovery Charge — 2.98. — uC

www.silikron.com Test circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. Repetitive rating; pulse width limited by max. junction temperature.② ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires.

www.silikron.com Mechanical Data： Min Nom Max Min Nom Max b 0.770 - 0.900 0.030 - 0.035 b2 1.230 - 1.360 0.048 - 0.054 D 15.100 15.400 15.700 - 0.606 - e ϴ1 50 70 90 50 70 90 ϴ2 10 30 50 10 30 50 0.073REF 5.08BSC 0.2BSC Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC 1.85REF TO220 PACKAGE OUTLINE DIMENSION

www.silikron.com Ordering and Marking Information Device Marking: SSF11NS65 Package (Available) TO220 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Packag e Type Units/Tu be Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO220 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j=125℃ to 175 ℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j=150℃ or 175 ℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices

www.silikron.com ATTENTION: ■ Any and all Silikron products described or contained here in do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures t hat result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high- quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the event that any or all Silik ron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmi tted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit param eters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice. Customer Service Worldwide Sales and Service: Sales@silikron.com Technical Support: Technical@silikron.com Suzhou Silikron Semiconductor Corp. 11A, 428 Xinglong Street, Suzhou Industrial Park, P.R.China TEL: (86-512) 62560688 FAX: (86-512) 65160705 E-mail: Sales@silikron.com