SSF11NS60 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.2 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 11 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 7 I DM Pulsed Drain Current② 44 A Power Dissipation③ 162 W P D @TC = 25°C Linear Derating Factor 1.5 W/°C V DS Drain-Source Voltage 600 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=22.5mH 281 mJ I AS Avalanche Current @ L=22.5mH 5 A T J T STG Operating Junction and Storage Temperature Range -55 to +150 °C V DSS 600V R DS (on) 0.36Ω (typ.) I D 11A TO-220 Marking and Pin Assignment Schematic Diagram  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product The SSF11NS60 series MOSFET is a new technology, which combines an innovative super junction technology and advance process. This new technology achieves low R DS(ON) , energy saving, high reliability and uniformity, superior power density and space saving.

www.goodark.com Page 2 of 7 Rev.1.2 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 0.77 ℃/W R θJA Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 600 — — V V GS = 0V, ID = 250μA — 0.36 0.41 V GS =10V,I D = 5.5A R DS(on) Static Drain-to-Source on-resistance — 0.88 — Ω T J = 125℃ 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 2.46 — V T J = 125℃ — — 1 V DS =600V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125°C 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 28.41 Q gs Gate-to-Source charge — 6.64 Q gd Gate-to-Drain("Miller") charge — 12.34 nC I D = 11A, V DS =480V, V GS = 10V t d(on) Turn-on delay time — 12.85 t r Rise time — 9.45 t d(off) Turn-Off delay time — 30.40 t f Fall time — 6.30 ns V GS =10V, VDS=300V, R L =54.5Ω, R GEN =4.7Ω ID=5.5A C iss Input capacitance — 824.8 C oss Output capacitance — 78.06 C rss Reverse transfer capacitance — 2.75 pF V GS = 0V V DS = 50V ƒ = 600KHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 11 A I SM Pulsed Source Current (Body Diode) — — 44 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.5 V I S =11A, V GS =0V t rr Reverse Recovery Time — 313 — ns Q rr Reverse Recovery Charge — 2.97 — uC T J = 25°C, I F =11A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.2 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C.

www.goodark.com Page 6 of 7 Rev.1.2 Mechanical Data Min Nom Max Min Nom Max e Q 1 5 Q 2 5 Q 3 Q 4 1 0.2BSC 7.35REF 0.29REF Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC 5.08BSC TO220 PACKAGE OUTLINE DIMENSION_GN

www.goodark.com Page 7 of 7 Rev.1.2 Ordering and Marking Information Device Marking: SSF11NS60 Package (Available) TO220 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO220 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices