SSF1122D SILIKRON | Alldatasheet
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©Silikron Semiconductor Corporation 2010.12.10 Version: 2.1 page 1of5 SSF1122D Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 60 A ID@Tc=100ْC Continuous drain current,VGS@10V 50 IDM Pulsed drain current ① 240 PD@TC=25ْC Power dissipation 1 43 W Linear derating factor 2.0 W/ ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 240 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +175 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 1.05 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 110 — — V V GS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 20 22 m Ω V GS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 3.0 4.0 V V DS=VGS,ID=250μA gfs Forward transconductance — 58 — S V DS=5V,ID=30A IDSS Drain-to-Source leakage current —— 1 μA VDS=110V,VGS=0V —— 1 0 VDS=110V, VGS=0V,TJ=150ْC SSF1122D TOP View (DPAK) ID =60A BV=110V Rdson=20mΩ（Typ.） Feathers: Advanced trench process technology Ultra low Rdson High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1122D is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1122D is assembled in high reliability and qualified assembly house. Application: Power switching application
©Silikron Semiconductor Corporation 2010.12.10 Version: 2.1 page 2of5 SSF1122D IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V Gate-to-Source reverse leakage — — -100 V GS=-20V Qg Total gate charge — 90 — nC ID= 3 0 A VDD=30V VGS=10V Qgs Gate-to-Source charge — 14 — Qgd Gate-to-Drain("Miller") charge — 24 — td(on) Turn-on delay time — 18.2 — nS VDD= 3 0 V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time — 15.6 — td(off) Turn-Off delay time — 70.5 — tf Fall time — 13.8 — Ciss Input capacitance — 3150 — pF VGS= 0 V VDS= 2 5 V f=1.0MHZ Coss Output capacitance — 300 — Crss Reverse transfer capacitance — 240 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 60 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 240 VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=30A,VGS=0V ③ trr Reverse Recovery Time — 57 — nS TJ=25ْC,IF=60A di/dt=100A/μs ③ Qrr Reverse Recovery Charge — 107 — nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 40A, VDD = 50V ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C Gate charge test circuit EAS test circuit
©Silikron Semiconductor Corporation 2010.12.10 Version: 2.1 page 3of5 SSF1122D Switch Time Test Circuit： Switch Waveforms: Transfer Characteristic Capacitance: On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature
©Silikron Semiconductor Corporation 2010.12.10 Version: 2.1 page 4of5 SSF1122D Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation 2010.12.10 Version: 2.1 page 5of5 SSF1122D DPAK MECHANICAL DATA: