SSF1122 GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 5 Rev.1.0 SSF 110V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I D c C Continuous drain current,VGS@10V 60 I D c C Continuous drain current,VGS@10V 50 I DM Pulsed drain current ① 240 A P D C C Power dissipation 150 W C V GS Gate-to-Source voltage ±20 V E AS Single pulse avalanche energy ② 240 mJ E AR Repetitive avalanche energy TBD T J T STG Operating Junction and Storage Temperature Range C Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case — 0.83 — R θJA Junction-to-ambient — — 62 C/W Electrical Characteristics @T J =25 C(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source breakdown voltage 110 — — V V GS =0V,I D =250μA R DS(on) Static Drain-to-Source on-resistance — 20 22 mΩ V GS =10V,I D =30A V GS(th) Gate threshold voltage 2.0 3.0 4.0 V V DS GS D =250μA g fs Forward transconductance - 58 — S V DS =5V,I D =30A — 1 V DS =100V,V GS =0V I DSS Drain-to-Source leakage current — 10 μA V DS =100V, V GS =0V, T J C I GSS Gate-to-Source forward leakage — — 100 nA V GS =20V ID =60A BV=110V R DS(ON) =20mΩ（Typ）
FEATURES
Advanced trench process technology Ultra low R DS(ON) High avalanche energy, 100% test Fully characterized avalanche voltage and current
DESCRIPTION
The SSF1122 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1122 is assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application SSF1122 TOP View (TO220)
www.goodark.com Page 2 of 5 Rev.1.0 SSF 110V N-Channel MOSFET Gate-to-Source reverse leakage — — -100 V GS =-20V Q g Total gate charge — 90 — Q gs Gate-to-Source charge — 14 — Q gd Gate-to-Drain("Miller") charge — 24 — nC I D =30A V DD =30V V GS =10V t d(on) Turn-on delay time — 18.2 t r Rise time — 15.6 t d(off) Turn-Off delay time — 70.5 t f Fall time — 13.8 nS V DD =30V I D =2A ,R L =15Ω R G =2.5Ω V GS =10V C iss Input capacitance — 3150 C oss Output capacitance — 300 — C rss Reverse transfer capacitance — 240 — pF V GS =0V V DS =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current . (Body Diode) — — 60 I SM Pulsed Source Current . (Body Diode) ① — — 240 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J C,I S =30A,V GS =0V ③ t rr Reverse Recovery Time － 57 — nS Q rr Reverse Recovery Charge － 107 — nC T J C,I F =60A di/dt=100A/μs ③ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 40A, VDD = 50V Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C Gate charge test circuit EAS test circuit
www.goodark.com Page 3 of 5 Rev.1.0 SSF 110V N-Channel MOSFET Switch Time Test Circuit： Switch Waveforms: Transfer Characteristic Capacitance: On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature
www.goodark.com Page 4 of 5 Rev.1.0 SSF 110V N-Channel MOSFET Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve
www.goodark.com Page 5 of 5 Rev.1.0 SSF 110V N-Channel MOSFET TO220 MECHANICAL DATA