SSF1116A GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 5 Rev.1.0 SSF A 110V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I D c C Continuous drain current,VGS@10V 75 I D c C Continuous drain current,VGS@10V 61 I DM Pulsed drain current ① 300 A Power dissipation 227 W P D C C C V GS Gate-to-Source voltage ±20 V E AS Single pulse avalanche energy ② 300 mJ E AR Repetitive avalanche energy TBD mJ dv/dt Peak diode recovery voltage 31 v/ns T J T STG Operating Junction and Storage Temperature Range C Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case — 0.55 — R θJA Junction-to-ambient — — 62 C/W Electrical Characteristics @T J =25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source breakdown voltage 110 120 — V V GS =0V,I D =250μA R DS(on) Static Drain-to-Source on-resistance — 12 16 mΩ V GS =10V,I D =30A V GS(th) Gate threshold voltage 2.0 — 4.0 V V DS GS D =250μA — — 2 V DS =110V,V GS =0V I DSS Drain-to-Source leakage current — — 10 μA V DS =110V, V GS =0V,T J C Gate-to-Source forward leakage — — 100 V GS =20V I GSS Gate-to-Source reverse leakage — — -100 nA V GS =-20V SSF1116A Top View (D2PAK) ID =75A BV=110V Rdson=12mΩ (Typ.)
FEATURES
Advanced trench process technology Avalanche energy, 100% test Fully characterized avalanche voltage and current
DESCRIPTION
The SSF1116A is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1116A is assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
www.goodark.com Page 2 of 5 Rev.1.0 SSF A 110V N-Channel MOSFET Q g Total gate charge — 110 Q gs Gate-to-Source charge — 22 — Q gd Gate-to-Drain("Miller") charge — 39 — nC I D =30A,V GS =10V V DD =30V t d(on) Turn-on delay time — 20 t r Rise time — 16 t d(off) Turn-Off delay time — 69 t f Fall time — 19 nS V DD I D =2A ,R L =15Ω R G =2.5Ω V GS =10V C iss Input capacitance — 3150 C oss Output capacitance — 350 C rss Reverse transfer capacitance — 240 pF V GS =0V V DS =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) — — 75 I SM Pulsed Source Current (Body Diode) ① — — 300 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J C,I S =60A,V GS =0V ③ t rr Reverse Recovery Time － 54 — nS Q rr Reverse Recovery Charge － 131 — μC T J C,I F =75A di/dt=100A/μs ③ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) EAS Test Circuit: Gate Charge Test Circuit: Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 50V,Id=45A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
www.goodark.com Page 3 of 5 Rev.1.0 SSF A 110V N-Channel MOSFET Switch Time Test Circuit: Switch Waveform: Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature
www.goodark.com Page 4 of 5 Rev.1.0 SSF A 110V N-Channel MOSFET Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Transient Thermal Impedance Curve
www.goodark.com Page 5 of 5 Rev.1.0 SSF A 110V N-Channel MOSFET D2PAK MECHANICAL DATA