SSF10N60 GOOD-ARK | Alldatasheet

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Technical content

www.goodark.com Page 1 of 7 Rev.1.0 Main Product Characteristics Features and Benefits

Description

Parameter Max. Units I D @ TC = 25°C Continuous Drain Current, V GS @ 10V① 10 I D @ TC = 100°C Continuous Drain Current, V GS @ 10V① 6 I DM Pulsed Drain Current② 40 A Power Dissipation③ 156 W P D @TC = 25°C Linear Derating Factor 1.25 W/°C V DS Drain-Source Voltage 600 V V GS Gate-to-Source Voltage ± 30 V E AS Single Pulse Avalanche Energy @ L=14.2mH 641 mJ I AS Avalanche Current @ L=14.2mH 9.5 A T J T STG Operating Junction and Storage Temperature Range -55 to + 150 °C V DSS 600V R DS (on) 0.69Ω (typ.) I D 10A TO-220 Marking and Pin Assignment Schematic Diagram  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150 ℃ operating temperature  Lead free product It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

www.goodark.com Page 2 of 7 Rev.1.0 Thermal Resistance Symbol Characteristics Typ. Max. Units R θJC Junction-to-case③ — 0.8 ℃/W Junction-to-ambient (t ≤ 10s) ④ — 62 ℃/W R θJA Junction-to-Ambient (PCB mounted, steady-state) ④ — ℃/W

Electrical Characteristics

A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source breakdown voltage 600 — — V V GS = 0V, ID = 250μA — 0.69 0.8 V GS =10V,I D = 5A R DS(on) Static Drain-to-Source on-resistance — 1.60 — Ω T J = 125℃ 2 — 4 V DS = V GS , I D = 250μA V GS(th) Gate threshold voltage — 1.8 — V T J = 125℃ — — 1 V DS = 600V,V GS = 0V I DSS Drain-to-Source leakage current — — 50 μA T J = 125℃ 100 V GS =30V I GSS Gate-to-Source forward leakage -100 nA V GS = -30V Q g Total gate charge — 25.09 Q gs Gate-to-Source charge — 7.74 — Q gd Gate-to-Drain("Miller") charge — 8.87 — nC I D = 9.5A, V DS =480V, V GS = 10V t d(on) Turn-on delay time — 20.2 — t r Rise time — 37.2 — t d(off) Turn-Off delay time — 65.2 — t f Fall time — 40.2 — ns V GS =10V, VDS=320V, R L =33.8Ω,R GEN =25Ω ID=9.5A C iss Input capacitance — 1257 — C oss Output capacitance — 159 — C rss Reverse transfer capacitance — 1.36 — pF V GS = 0V V DS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current (Body Diode) — — 10 A I SM Pulsed Source Current (Body Diode) — — 40 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — 0.92 1.4 V I S =10A, V GS =0V t rr Reverse Recovery Time — 745 — ns Q rr Reverse Recovery Charge — 4841 — nC T J = 25°C, I F =9.5A, di/dt = 100A/μs

www.goodark.com Page 3 of 7 Rev.1.0 Test Circuits and Waveforms Switch Waveforms: Notes ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX) =150°C.

www.goodark.com Page 6 of 7 Rev.1.0 Mechanical Data Min Nom Max Min Nom Max ФP1 1.500 0.059 e ϴ1 - 7 - - 7 ϴ2 - 7 - - 7 ϴ3 - 3 - 5 ϴ4 - 3 - 1 Symbol Dimension In Millimeters Dimension In Inches 2.54BSC 0.1BSC TO-220 PACKAGE OUTLINE DIMENSION_GN E D ФP A ce b ϴ2 ϴ L ФP1 E

www.goodark.com Page 7 of 7 Rev.1.0 Ordering and Marking Information Device Marking: SSF10N60 Package (Available) TO220 Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/Inner Box Units/Inner Box Inner Boxes/Carton Box Units/Carton Box TO220 50 20 1000 6 6000 Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) T j =125℃ to 150 ℃ @ 80% of Max V DSS CES /VR 168 hours 500 hours 1000 hours 3 lots x 77 devices High Temperature Gate Bias(HTGB) T j =150℃ @ 100% of Max V GSS 168 hours 500 hours 1000 hours 3 lots x 77 devices