SSF1090 SILIKRON | Alldatasheet
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©Silikron Semiconductor Corporation 2009.6.10 Version: 2.1 page 1of5 SSF1090 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 15 A ID@Tc=ْC Continuous drain current,VGS@10V 10 IDM Pulsed drain current ① 60 PD@TC=ْC Power dissipation 42 W Linear derating factor 0.4 WْC VGS Gate-to-Source voltage ± 20 V EAS Single pulse avalanche energy ② 240 mJ EAR Repetitive avalanche energy TBD mJ dv/dt Peak diode recovery voltage 28 v/ns TJ TSTG Operating Junction and Storage Temperature Range –55 to +175 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 3.6 — C/W RθJA Junction-to-ambient — — 69 *When mounted on the minimum pas size recommended（PCB Mount） Electrical Characteristics @TJ=25 ْC (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 100 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 0.06 0.09 Ω VGS=10V,ID=2A VGS(th) Gate threshold voltage 2.0 — 4.0 V VDS=VGS,ID=250μA IDSS Drain-to-Source leakage current — — 1 μA VDS=30V,VGS=0V — — 10 VDS=100V, VGS=0V,TJ=1ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V SSF1090 TOP View (TO-220) ID =15A BV=100V Rdson=0.06Ω (Typ.) Feathers: Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current Avalanche Energy 100% test Description: The SSF1090 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1090 is assembled in high reliability and qualified assembly house. Application: Power switching application
©Silikron Semiconductor Corporation 2009.6.10 Version: 2.1 page 2of5 SSF1090 Gate-to-Source reverse leakage — — -100 VGS=-20V Qg Total gate charge — 21.18 nC ID=9.2A,VGS=10V VDD=80V,RL=8.6Ω Qgs Gate-to-Source charge — 4.7 — Qgd Gate-to-Drain("Miller") charge — 8.5 — td(on) Turn-on delay time — 10 nS VDD=50V ID=9.2A ,RL=5.4Ω RG=18Ω VGS=10V tr Rise time — 9.5 td(off) Turn-Off delay time — 18.3 tf Fall time — 4.2 Ciss Input capacitance — 697 750 pF VGS=0V VDS=25V f=1.0MHZ Coss Output capacitance — 59 110 Crss Reverse transfer capacitance — 43 45 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current (Body Diode) — — 3 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 18 VSD Diode Forward Voltage — — 1.3 V TJ=ْC,IS=3A,VGS=0V ③ trr Reverse Recovery Time — 35 — nS TJ=ْC,IF=9.2A di/dt=100A/μs ③ Qrr Reverse Recovery Charge — 67.2 — μC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) EAS Test Circuit: Gate Charge Test Circuit: VDD BVdss L RG Vdd RL RG1mA Vgs Notes: ① Repetitive rating; pulse width limited by max junction temperature ② Test condition: L =30mH, VDD = 50V, Id=4A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25° C
©Silikron Semiconductor Corporation 2009.6.10 Version: 2.1 page 3of5 SSF1090 Switch Time Test Circuit: Switch Waveform: On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature Gate Charge Source-Drain Diode Forward Voltage
©Silikron Semiconductor Corporation 2009.6.10 Version: 2.1 page 4of5 SSF1090 Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve
©Silikron Semiconductor Corporation 2009.6.10 Version: 2.1 page 5of5 SSF1090 TO220 MECHANICAL DATA: