SSF1090_15 GOOD-ARK | Alldatasheet
Document overview
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Technical content
www.goodark.com Page 1 of 5 Rev.2.1 SSF 1090 100V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I D c C Continuous drain current,VGS@10V 15 I D c C Continuous drain current,VGS@10V 10 I DM Pulsed drain current ① 60 A Power dissipation 42 W P D C C C V GS Gate-to-Source voltage ±20 V E AS Single pulse avalanche energy ② 240 mJ E AR Repetitive avalanche energy TBD mJ dv/dt Peak diode recovery voltage 28 v/ns T J T STG Operating Junction and Storage Temperature Range C Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case — 3.6 — R θJA Junction-to-ambient — — 69 C/W *When mounted on the minimum pas size recommended（PCB Mount） Electrical Characteristics @T J =25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source breakdown voltage 100 — — V V GS =0V,I D =250μA R DS(on) Static Drain-to-Source on-resistance — 0.06 0.09 Ω V GS =10V,I D =2A V GS(th) Gate threshold voltage 2.0 — 4.0 V V DS GS D =250μA — — 1 V DS =30V,V GS =0V I DSS Drain-to-Source leakage current — — 10 μA V DS =100V, V GS =0V,T J C I GSS Gate-to-Source forward leakage — — 100 nA V GS =20V SSF1090 Top View (TO-220) ID =15A BV=100V R DS (ON) =0.06Ω (Typ.)
FEATURES
Advanced trench process technology Special designed for Convertors and power controls High density cell design for ultra low R DS (ON) Fully characterized Avalanche voltage and current Avalanche Energy 100% test Lead free product
DESCRIPTION
The SSF1090 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1090 is assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
www.goodark.com Page 2 of 5 Rev.2.1 SSF 1090 100V N-Channel MOSFET Gate-to-Source reverse leakage — — -100 V GS =-20V Q g Total gate charge — 21.18 Q gs Gate-to-Source charge — 4.7 Q gd Gate-to-Drain("Miller") charge — 8.5 nC I D =9.2A,V GS =10V V DD =80V,RL=8.6Ω t d(on) Turn-on delay time — 10 t r Rise time — 9.5 t d(off) Turn-Off delay time — 18.3 t f Fall time — 4.2 nS V DD I D =9.2A ,R L =5.4Ω R G =18Ω V GS =10V C iss Input capacitance — 697 750 C oss Output capacitance — 59 110 C rss Reverse transfer capacitance — 43 pF V GS =0V V DS =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) — — 3 I SM Pulsed Source Cur rent (Body Diode) ① — — 18 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J C,I S =3A,V GS =0V ③ t rr Reverse Recovery Time — 35 — nS Q rr Reverse Recovery Charge — 67.2 — μC T J C,I F =9.2A di/dt=100A/μs ③ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) EAS Test Circuit Gate Charge Test Circuit Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =30mH, VDD = 50V, Id=4A. ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting T J = 25°C
www.goodark.com Page 3 of 5 Rev.2.1 SSF 1090 100V N-Channel MOSFET Switch Time Test Circuit Switch Waveform On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature Gate Charge Source-Drain Diode Forward Voltage
www.goodark.com Page 4 of 5 Rev.2.1 SSF 1090 100V N-Channel MOSFET Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve
www.goodark.com Page 5 of 5 Rev.2.1 SSF 1090 100V N-Channel MOSFET TO220 MECHANICAL DATA