SSF1030D SILIKRON | Alldatasheet

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©Silikron Semiconductor Corporation 2010.3.15 Version: 2.1 page 1of5 SSF1030D Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 45 A ID@Tc=100ْC Continuous drain current,VGS@10V 35 IDM Pulsed drain current ① 180 PD@TC=25ْC Power dissipation 84 W Linear derating factor 1.5 W/ ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 168 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +175ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 1.78 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 100 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance —2 3 2 5 m Ω VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 3.1 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 50 — S VDS=5V,ID=30A IDSS Drain-to-Source leakage current —— 1 μA VDS=100V,VGS=0V —— 1 0 VDS=100V, VGS=0V,TJ=150ْC SSF1030D TOP View (DPAK) ID =45A BV=100V Rdson=23mΩ（typ.） Feathers: „ Advanced trench process technology „ Ultra low Rdson, typical 23mohm „ High avalanche energy, 100% test „ Fully characterized avalanche voltage and current Description: The SSF1030D is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1030D is assembled in high reliability and qualified assembly house. Application: „ Power switching application

©Silikron Semiconductor Corporation 2010.3.15 Version:2.1 page 2of5 SSF1030D IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V Gate-to-Source reverse leakage — — -100 VGS=-20V Qg Total gate charge —4 . 2 — nC ID= 3 0 A VDD=30V VGS=10V Qgs Gate-to-Source charge —1 5 — Qgd Gate-to-Drain("Miller") charge — 14.6 — td(on) Turn-on delay time — 14.2 — nS VDD= 3 0 V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time —4 0 — td(off) Turn-Off delay time —7 . 3 — tf Fall time — 14.8 — Ciss Input capacitance — 190 — pF VGS= 0 V VDS= 2 5 V f=1.0MHZ Coss Output capacitance — 135 — Crss Reverse transfer capacitance —4 . 2 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 45 A MOSFET symbol showing the integral reverse p-n junction diode. ISM P u l s e d S o u r c e C u r r e n t . (Body Diode) ① — — 180 VSD Diode Forward Voltage — — 1.3 V T J=25ْC,IS=30A,VGS=0V ③ trr Reverse Recovery Time － 57 — nS TJ=25ْC,IF=30A di/dt=100A/μs ③ Qrr Reverse Recovery Charge － 107 — nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 33.5A, VDD = 50V ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C Gate charge test circuit EAS test circuit

©Silikron Semiconductor Corporation 2010.3.15 Version: 2.1 page 3of5 SSF1030D Switch Time Test Circuit： Switch Waveforms: Transfer Characteristic Capacitance: On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature

©Silikron Semiconductor Corporation 2010.3.15 Version: 2.1 page 4of5 SSF1030D Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Temperature Transient Thermal Impedance Curve

©Silikron Semiconductor Corporation 2010.3.15 Version: 2.1 page 5of5 SSF1030D DPAK MECHANICAL DATA: