SSF1030B

SSF1030B SILIKRON | Alldatasheet

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©Silikron Semiconductor Corporation 2011.2.23 Version: 1.1 page 1 of 5 SSF1030B Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 7 A ID@Tc=ْC Continuous drain current,VGS@10V 5.0 IDM Pulsed drain current ① 30 PD@TC=ْC Power dissipation 8.8 W VGS Gate-to-Source voltage ± 20 V EAS Single pulse avalanche energy ② 33 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +175 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 17 — ْC/W RθJA Junction-to-ambient — — 85 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 100 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 25 30 mΩ VGS=10V,ID=10A VGS(th) Gate threshold voltage 2.0 3.1 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance — 25 — S VDS=15V,ID=6.9A IDSS Drain-to-Source leakage current — — 1 μA VDS=100V,VGS=0V — — 10 VDS=100V, VGS=0V,TJ=1ْC SOP-8 TOP View Marking and pin Assignment ID =7A BV=100V Rdson=25mΩ（typ.） Feathers:  Advanced trench process technology  Ultra low Rdson, typical 25mohm  High avalanche energy, 100% test  Fully characterized avalanche voltage and current Description: The SSF1030B is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1030B is assembled in high reliability and qualified assembly house. Application:  Power switching application

©Silikron Semiconductor Corporation 2011.2.23 Version: 1.1 page 2 of 5 SSF1030B IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V Gate-to-Source reverse leakage — — -100 VGS=-20V Qg Total gate charge — 42 — nC ID=6.9A VDD=30V VGS=10V Qgs Gate-to-Source charge — 15 — Qgd Gate-to-Drain("Miller") charge — 14.6 — td(on) Turn-on delay time — 14.2 — nS VDD=30V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time — 40 — td(off) Turn-Off delay time — 7.3 — tf Fall time — 14.8 — Ciss Input capacitance — 190 — pF VGS=0V VDS=25V f=1.0MHZ Coss Output capacitance — 135 — Crss Reverse transfer capacitance — 4.2 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 7 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current . (Body Diode) ① — — 30 VSD Diode Forward Voltage — — 1.3 V TJ=ْC,IS=30A,VGS=0V ③ trr Reverse Recovery Time － 57 — nS TJ=ْC,IF=3.1A di/dt=100A/μs ③ Qrr Reverse Recovery Charge － 107 — nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 15A, VDD = 50V ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25° C

©Silikron Semiconductor Corporation 2011.2.23 Version: 1.1 page 3 of 5 SSF1030B VDD BVdss L RG Vdd RL RG1mA Vgs Transient Thermal Impedance Curve Gate charge test circuit EAS test circuit Switch Time Test Circuit Switch Waveforms ZthJA Normalized Transient Thermal Resistance

©Silikron Semiconductor Corporation 2011.2.23 Version: 1.1 page 4 of 5 SSF1030B SOP-8 PACKAGE INFORMATION NOTES： 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.

©Silikron Semiconductor Corporation 2011.2.23 Version: 1.1 page 5 of 5 SSF1030B ATTENTION: ■ Any and all Silikron products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life -support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Cons ult with your Silikron representative nearest you before using any Silikron products described or contained herein in such applications. ■ Silikron assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Silikron products described or contained herein. ■ Specifications of any and all Silikron products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, th e customer should always evaluate and test devices mounted in the customer’s products or equipment. ■ Silikron Semiconductor CO.,LTD. strives to supply high -quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. ■ In the ev ent that any or all Silikron products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. ■ No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or re trieval system, or otherwise, without the prior written permission of Silikron Semiconductor CO.,LTD. ■ Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. Silikron believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. ■ Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the Silikron product that you intend to use. ■ This catalog provides information as of Dec, 2008. Specifications and information herein are subject to change without notice.