SSF1030B GOOD-ARK | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
www.goodark.com Page 1 of 4 Rev.1.1 SSF B 100V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I D c C Continuous drain current,VGS@10V 7 I D c C Continuous drain current,VGS@10V 5.0 I DM Pulsed drain current ① 30 A P D C C Power dissipation 8.8 W V GS Gate-to-Source voltage ±20 V E AS Single pulse avalanche energy ② 33 mJ E AR Repetitive avalanche energy TBD T J T STG Operating Junction and C Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case — 17 — R θJA Junction-to-ambient — — 85 C/W Electrical Characteristics @T J =25 C(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source breakdown voltage 100 — — V V GS =0V,I D =250μA R DS(on) Static Drain-to-Source on-resistance — 25 30 mΩ V GS =10V,I D =10A V GS(th) Gate threshold voltage 2.0 3.1 4.0 V V DS GS D =250μA g fs Forward transconductance — 25 — S V DS =15V,I D =6.9A — 1 V DS =100V,V GS =0V I DSS Drain-to-Source leakage current — 10 μA V DS =100V, V GS =0V,T J C I GSS Gate-to-Source forward leakage — — 100 nA V GS =20V SOP-8 Top View Marking and Pin Assignmen t ID =7A BV=100V R DS (ON) =25mΩ（typ.）
FEATURES
Advanced trench process technology Ultra low Rdson, typical 25mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
DESCRIPTION
The SSF1030B is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1030B is assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
www.goodark.com Page 2 of 4 Rev.1.1 SSF B 100V N-Channel MOSFET Gate-to-Source reverse leakage — — -100 V GS =-20V Q g Total gate charge — 42 — Q gs Gate-to-Source charge — 15 — Q gd Gate-to-Drain("Miller") charge — 14.6 nC I D =6.9 A V DD =30V V GS =10V t d(on) Turn-on delay time — 14.2 t r Rise time — 40 — t d(off) Turn-Off delay time — 7.3 — t f Fall time — 14.8 nS V DD =30V I D =2A ,R L =15Ω R G =2.5Ω V GS =10V C iss Input capacitance — 190 — C oss Output capacitance — 135 — C rss Reverse transfer capacitance — 4.2 — pF V GS =0V V DS =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current . (Body Diode) — — 7 I SM Pulsed Source Current . (Body Diode) ① — — 30 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J C,I S =30A,V GS =0V ③ t rr Reverse Recovery Time － 57 — nS Q rr Reverse Recovery Charge － 107 — nC T J C,I F =3.1A di/dt=100A/μs ③ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 15A, VDD = 50V. Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting T J = 25°C. Gate charge test circuit EAS test circuit
www.goodark.com Page 3 of 4 Rev.1.1 SSF B 100V N-Channel MOSFET Transient Thermal Impedance Curve Switch Time Test Circuit Switch Waveforms Z thJA Normalized Transient Thermal Resistance
www.goodark.com Page 4 of 4 Rev.1.1 SSF B 100V N-Channel MOSFET SOP-8 PACKAGE INFORMATION NOTES 1. Dimensions are inclusive of plating 2. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 6 mils. 3. Dimension L is measured in gauge plane. 4. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.