SSF1020 SILIKRON | Alldatasheet
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©Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1.0 page 1of5 SSF1020 Absolute Maximum Ratings Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 60 A ID@Tc=100ْC Continuous drain current,VGS@10V 50 IDM Pulsed drain current ① 240 PD@TC=25ْC Power dissipation 150 W Linear derating factor 2.0 W/ ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 240 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 0.83 — ْC/W RθJA Junction-to-ambient — — 62 Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 100 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance —1 6 2 0 m Ω VGS=10V,ID=30A VGS(th) Gate threshold voltage 2.0 3.0 4.0 V VDS=VGS,ID=250μA gfs Forward transconductance - 58 — S VDS=5V,ID=30A IDSS Drain-to-Source leakage current —— 1 μA VDS=100V,VGS=0V —— 1 0 VDS=100V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V SSF1020 TOP View (TO220) ID =60A BV=100V Rdson=20mΩ（max.） Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF1020 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1020 is assembled in high reliability and qualified assembly house. Application: Power switching application
©Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1.0 page 2of5 SSF1020 Gate-to-Source reverse leakage — — -100 VGS=-20V Qg Total gate charge —9 0 — nC ID= 3 0 A VDD=30V VGS=10V Qgs Gate-to-Source charge — 14 — Qgd Gate-to-Drain("Miller") charge — 24 — td(on) Turn-on delay time — 18.2 — nS VDD= 3 0 V ID=2A ,RL=15Ω RG=2.5Ω VGS=10V tr Rise time — 15.6 — td(off) Turn-Off delay time — 70.5 — tf Fall time — 13.8 — Ciss Input capacitance — 3150 — pF VGS= 0 V VDS= 2 5 V f=1.0MHZ Coss Output capacitance — 300 — Crss Reverse transfer capacitance — 240 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 60 A MOSFET symbol showing the integral reverse p-n junction diode. ISM P u l s e d S o u r c e C u r r e n t . (Body Diode) ① — — 240 VSD Diode Forward Voltage — — 1.3 V T J=25ْC,IS=30A,VGS=0V ③ trr Reverse Recovery Time － 57 — nS TJ=25ْC,IF=60A di/dt=100A/μs ③ Qrr Reverse Recovery Charge － 107 — nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 40A, VDD = 50V ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C BVdss Gate charge test circuit EAS test circuit
©Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1.0 page 3of5 SSF1020 Switch Time Test Circuit： Switch Waveforms: Transfer Characteristic Capacitance: On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature
©Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1.0 page 4of5 SSF1020 Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve
©Silikron Semiconductor CO.,LTD 2009.12.13 Version : 1.0 page 5of5 SSF1020 TO220 MECHANICAL DATA: