SSF1020 GOOD-ARK | Alldatasheet
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Technical content
www.goodark.com Page 1 of 5 Rev.2.2 SSF1020 100V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I D c C Continuous drain current,VGS@10V 60 I D c C Continuous drain current,VGS@10V 50 I DM Pulsed drain current ① 240 A Power dissipation 180 W P D C C C V GS Gate-to-Source voltage ±20 V E AS Single pulse avalanche energy ② 240 mJ E AR Repetitive avalanche energy TBD T J T STG Operating Junction and Storage Temperature Range C Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case — 0.83 — R θJA Junction-to-ambient — — 62 C/W Electrical Characteristics @T J =25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source breakdown voltage 100 — — V V GS =0V,I D =250μA R DS(on) Static Drain-to-Source on-resistance — 16 20 mΩ V GS =10V,I D =30A V GS(th) Gate threshold voltage 2.0 3.0 4.0 V V DS GS D =250μA g fs Forward transconductance — 58 — S V DS =5V,I D =30A — 1 V DS =100V,V GS =0V I DSS Drain-to-Source leakage current — 10 μA V DS =100V, V GS =0V, T J C ID =60A BV=100V R DS(ON) =16mΩ（Typ.）
FEATURES
Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
DESCRIPTION
The SSF1020 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1020 is assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application SSF1020 Top View (TO-220)
www.goodark.com Page 2 of 5 Rev.2.2 SSF1020 100V N-Channel MOSFET Gate-to-Source forward leakage — — 100 V GS =20V I GSS Gate-to-Source reverse leakage — — -100 nA V GS =-20V Q g Total gate charge — 90 — Q gs Gate-to-Source charge — 14 — Q gd Gate-to-Drain("Miller") charge — 24 — nC I D =30A V DD =30V V GS =10V t d(on) Turn-on delay time — 18.2 t r Rise time — 15.6 t d(off) Turn-Off delay time — 70.5 t f Fall time — 13.8 nS V DD =30V I D =2A ,R L =15Ω R G =2.5Ω V GS =10V C iss Input capacitance — 3150 C oss Output capacitance — 300 — C rss Reverse transfer capacitance — 240 — pF V GS =0V V DS =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) — — 60 I SM Pulsed Source Current (Body Diode) ① — — 240 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J C,I S =30A,V GS =0V ③ t rr Reverse Recovery Time — 57 — nS Q rr Reverse Recovery Charge — 107 — nC T J C,I F =60A di/dt=100A/μs ③ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, ID = 40A, VDD = 50V ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C Gate charge test circuit EAS test c ircuit
www.goodark.com Page 3 of 5 Rev.2.2 SSF1020 100V N-Channel MOSFET Switch Time Test Circuit： Switch Waveforms: Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature
www.goodark.com Page 4 of 5 Rev.2.2 SSF1020 100V N-Channel MOSFET Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain C urrent vs. Junction Temperature Transient Thermal Impedance Curve
www.goodark.com Page 5 of 5 Rev.2.2 SSF1020 100V N-Channel MOSFET TO220 MECHANICAL DATA