SSF1016 GOOD-ARK | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
www.goodark.com Page 1 of 6 Rev.2.2 SSF 100V N-Channel MOSFET Absolute Maximum Ratings Parameter Max. Units I D c C Continuous drain current,VGS@10V 75 I D c C Continuous drain current,VGS@10V 65 I DM Pulsed drain current ① 300 A Power dissipation 273 W P D C C C V GS Gate-to-Source voltage ±20 V E AS Single pulse avalanche energy ② 380 mJ E AR Repetitive avalanche energy TBD mJ dv/dt Peak diode recovery voltage 31 v/ns T J T STG Operating Junction and Storage Temperature Range C Thermal Resistance Parameter Min. Typ. Max. Units R θJC Junction-to-case — 0.55 — R θJA Junction-to-ambient — — 62 C/W Electrical Characteristics @T J =25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BV DSS Drain-to-Source breakdown voltage 100 — — V V GS =0V,I D =250μA R DS(on) Static Drain-to-Source on-resistance — 11 16 mΩ V GS =10V,I D =30A V GS(th) Gate threshold voltage 2.0 — 4.0 V V DS GS D =250μA — — 2 V DS =100V,V GS =0V I DSS Drain-to-Source leakage current — — 10 μA V DS =100V, V GS =0V,T J C I GSS Gate-to-Source forward leakage — — 100 nA V GS =20V SSF1016 Top View (T0-220) ID =75A BV=100V R DS (ON) =16mΩ (Max.)
FEATURES
Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Lead free product
DESCRIPTION
The SSF1016 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF1016 is assembled in high reliability and qualified assembly house.
APPLICATIONS
Power switching application
www.goodark.com Page 2 of 6 Rev.2.2 SSF 100V N-Channel MOSFET Gate-to-Source reverse leakage — — -100 V GS =-20V Q g Total gate charge — 90 Q gs Gate-to-Source charge — 20 — Q gd Gate-to-Drain("Miller") charge — 31 — nC I D =30A,V GS =10V V DD =30V t d(on) Turn-on delay time — 18.2 t r Rise time — 15.6 t d(off) Turn-Off delay time — 70.5 t f Fall time — 13.8 nS V DD I D =2A ,R L =15Ω R G =2.5Ω V GS =10V C iss Input capacitance — 3150 C oss Output capacitance — 350 C rss Reverse transfer capacitance — 240 pF V GS =0V V DS =25V f=1.0MHZ Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions I S Continuous Source Current (Body Diode) — — 75 I SM Pulsed Source Current (Body Diode) ① — — 300 A MOSFET symbol showing the integral reverse p-n junction diode. V SD Diode Forward Voltage — — 1.3 V T J C,I S =60A,V GS =0V ③ t rr Reverse Recovery Time － 57 — nS Q rr Reverse Recovery Charge － 107 — μC T J C,I F =75A di/dt=100A/μs ③ t on Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) EAS Test Circuit Gate Charge Test Circuit Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =0.3mH, VDD = 50V,Id=37A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting T J = 25°C
www.goodark.com Page 3 of 6 Rev.2.2 SSF 100V N-Channel MOSFET Switch Time Test Circuit Switch Waveform
www.goodark.com Page 4 of 6 Rev.2.2 SSF 100V N-Channel MOSFET Transfer Characteristic Capacitance On Resistance vs. Junction Temperature Breakdown Voltage vs. Junction Temperature
www.goodark.com Page 5 of 6 Rev.2.2 SSF 100V N-Channel MOSFET Gate Charge Source-Drain Diode Forward Voltage Safe Operation Area Max Drain Current vs. Junction Transient Thermal Impedance Curve
www.goodark.com Page 6 of 6 Rev.2.2 SSF 100V N-Channel MOSFET TO-220 MECHANICAL DATA