SSF1007 GOOD-ARK | Alldatasheet
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Technical content
www.goodark.com Page 1 of 5 Rev.1.0 Main Product Characteristics V DSS 100V （Typ） R DS (on) 6mohm （Typ） I D 130A Features and Benefits SSF1007 Top View (TO-220) Advanced trench MOSFET process technology Special designed for convertors and power controls Ultra low on-resistance 150 ℃ operating temperature High Avalanche capability and 100% tested Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ① 130 ID @ TC = 100°C Continuous Drain Current, VGS @ 10V① 91 IDM Pulsed Drain Current ② 520 ISM Pulsed Source Current.(Body Diode) 258 A Power Dissipation③ 1.7 W PD @TC = 25°C VDS Drain-Source Voltage 735 V VGS Gate-to-Source Voltage 75 V dv/dt Peak diode recovery voltage -55 to + 175 v/ns EAS Single Pulse Avalanche Energy @ L=0.3mH ② 130 mJ IAR Avalanche Current @ L=0.3mH ② 91 A TJ TSTG Operating Junction and Storage Temperature Range 520 °C Thermal Resistance Symbol Characteristics Value Unit R θJC Junction-to-case ③ 0.58 ℃/W R θJA Junction-to-ambient (t ≤ 10s) 62 ℃/W
www.goodark.com Page 2 of 5 Rev.1.0
Electrical Characteristics
A =25℃ unless otherwise specified Symbol Parameter Min. Typ. Max Units Conditions BVDSS Drain-to-Source breakdown voltage 100 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 5 6 mΩ VGS = 10V, ID = 75A③ VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — — 20 VDS = 100V, VGS = 0V IDSS Drain-to-Source leakage current — — 250 μA VDS = 80V, VGS = 0V, TJ = 125°C Gate-to-Source forward leakage — — 100 VGS = 20V IGSS Gate-to-Source reverse leakage — — -100 nA VGS = -20V Qg Total gate charge — 243 170 Qgs Gate-to-Source charge — 47 — Qgd Gate-to-Drain("Miller") charge — 92 — nC ID = 75A VDS = 50V VGS = 10V③ td(on) Turn-on delay time — 28 — tr Rise time — 108 — td(off) Turn-Off delay time — 123 — tf Fall time — 120 — ns VDD = 65V ID = 75A RG = 2.7 Ω VGS = 10V③ Ciss Input capacitance — 8456 — Coss Output capacitance — 454 — Crss Reverse transfer capacitance — 417 — pF VGS = 0V VDS = 50V ƒ = 500KHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max Units Conditions IS Continuous Source Current (Body Diode) — — 130 MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 520 A TJ = 25°C, IS = 75A, VGS = 0V③ VSD Diode Forward Voltage — 1.3 V TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/μs③ trr Reverse Recovery Time — 57 70 ns Qrr Reverse Recovery Charge — 156 170 nC TJ = 25°C, IF = 75A,Vgs=0V di/dt = 100A/μs③ ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive ra① ting; pulse width limited by max. junction temperature. not recommended for use above this value. This ④ is only applied to TO-220 package. Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.goodark.com Page 5 of 5 Rev.1.0 Mechanical Data TO-220