SSF0115 SILIKRON | Alldatasheet
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Parameter Max. Units ID@Tc=25 ْC Continuous drain current,VGS@10V 3 A ID@Tc=100ْC Continuous drain current,VGS@10V 2.3 IDM Pulsed drain current ① 12 PD@TC=25ْC Power dissipation 1.8 W Linear derating factor 0.019 W/ ْC VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 79 mJ EAR Repetitive avalanche energy TBD mJ dv/dt Peak diode recovery voltage v/ns TJ TSTG Operating Junction and Storage Temperature Range –55 to +150 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJA Junction-to-ambient — — 69 C/W *When mounted on the minimum pas size recommended（PCB Mount）. Electrical Characteristics @TJ=25 ْC(unless otherwise specified) Parameter Min. Typ. Max. Units Test Conditions BVDSS Drain-to-Source breakdown voltage 100 — — V VGS=0V,ID=250μA RDS(on) Static Drain-to-Source on-resistance — 0.09 0.15 Ω VGS=10V,ID=2A VGS(th) Gate threshold voltage 2.0 — 4.0 V VDS=VGS,ID=250μA IDSS Drain-to-Source leakage current — — 1 μA VDS=30V,VGS=0V — — 10 VDS=100V, VGS=0V,TJ=150ْC IGSS Gate-to-Source forward leakage — — 100 nA VGS=20V Gate-to-Source reverse leakage — — -100 VGS=-20V SSF0115 TOP View (SOT-223) ID =3A BV=100V Rdson=0.15Ω Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The SSF0115 is a new generation of high voltage and low current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. SSF0115 is assembled in high reliability and qualified assembly house. Application: IEEE802.3AF Compatible
Qg Total gate charge — 18 22 nC ID=9.2A,VGS= 1 0 V VDD=80V,RL=8.6Ω Qgs Gate-to-Source charge — 2.7 — Qgd Gate-to-Drain("Miller") charge — 7.8 — td(on) Turn-on delay time — 12 40 nS VDD= 5 0 V ID=9.2A ,RL=5.4Ω RG=18Ω VGS= 1 0 V tr Rise time — 12 40 td(off) Turn-Off delay time — 33 85 tf Fall time — 26 68 Ciss Input capacitance — 350 480 pF VGS= 0 V VDS= 2 5 V f=1.0MHZ Coss Output capacitance — 90 110 Crss Reverse transfer capacitance — 35 45 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Test Conditions IS Continuous Source Current . (Body Diode) — — 3 A MOSFET symbol showing the integral reverse p-n junction diode. ISM P u l s e d S o u r c e C u r r e n t . (Body Diode) ① — — 18 VSD Diode Forward Voltage — — 1.3 V TJ=25ْC,IS=3A,VGS=0V ③ trr Reverse Recovery Time － 98 — nS TJ=25ْC,IF=9.2A di/dt=100A/μs ③ Qrr Reverse Recovery Charge － 0.34 — μC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD) Notes: ① Repetitive rating; pulse width limited by max junction temperature. ② Test condition: L =30mH, VDD = 50V,Id=2.3A ③ Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C
E A S T e s t C i r c u i t : G a t e C h a r g e T e s t C i r c u i t : S w i t c h T i m e T e s t C i r c u i t : S w i t c h W a v e f o r m : Gate Charge Source-Drain Diode Forward Voltage
On Resistance vs Junction Temperature Breakdown Voltage vs Junction Temperature Safe Operation Area Max Drain Current vs Junction Temperature Transient Thermal Impedance Curve
SOT-223 MECHANICAL DATA: