SSE75N03 SECOS | Alldatasheet

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Technical content

75 A, 25 V , RDS(ON) 4.5 mΩ N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. A Page 1 of 4 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSE75N03 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance. The through-hole version (TO-220) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.

FEATURES

z Simple Drive Requirement z Fast Switching PACKAGE DIMENSIONS A 4.40 4.80 c1 1.25 1.45 b 0.76 1.00 b1 1.17 1.47 c 0.36 0.50 L 13.25 14.25 D 8.60 9.00 e 2.54 REF. E 9.80 10.4 L1 2.60 2.89 L4 14.7 15.3 Ø 3.71 3.96 L5 6.20 6.60 A1 2.60 2.80 ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Drain-Source Voltage VDS 25 V Gate-Source Voltage V GS ±20 V Drain Current,VGS@ 4.5V ID @Ta=25℃ 75 A Drain Current,VGS@ 4.5V ID @Ta=100℃ 62.5 A Pulsed Drain Current1 IDM 350 A Total Power Dissipation P D @Tc=25℃ 96 W Linear Derating Factor 0.76 W/°C Single Pulse Avalanche Energy2 EAS 400 mJ Single Pulse Avalanche Current IAS 40 A Operating Junction and Storage Temperature Range Tj, Tstg -55 ~ +150 °C THERMAL DATA Parameter Symbol Value Unit Thermal Resistance Junction-case Max. Rθj-case 1.3 °C/W Thermal Resistance Junction-ambient Max. Rθj-amb 62 °C/W

75 A, 25 V , RDS(ON) 4.5 mΩ N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. A Page 2 of 4 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BVDSS 25 - - V VGS=0, ID=250uA Breakdown Voltage Temp. Coefficient △BVDSS/△Tj - 0.02 - V/°C Reference to 25 , I℃ D=1mA Gate Threshold Voltage VGS(th) 1.0 - 3.0 V VDS=VGS, ID=250uA Forward Transconductance gfs - 29 - S VDS=10V, ID=30A Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V Drain-Source Leakage Current(Tj=25 ) ℃ - - 1 uA VDS=25V, VGS=0 Drain-Source Leakage Current(Tj=150 )℃ IDSS - - 25 uA VDS=20V, VGS=0 - 3.7 4.5 VGS=10V, ID=40A Static Drain-Source On-Resistance3 RDS(ON) - 6.0 7 mΩ VGS=4.5V, ID=30A Total Gate Charge3 Qg - 33 - Gate-Source Charge Qgs - 9 - Gate-Drain (“Miller”) Change Qgd - 15 - nC ID=30A VDS=20V VGS=4.5V Turn-on Delay Time3 Td(on) - 10 - Rise Time Tr - 80 - Turn-off Delay Time Td(off) - 37 - Fall Time Tf - 85 - ns VDS=15V ID=30A VGS=10V RG=3.3Ω RD=0.5Ω Input Capacitance Ciss - 2070 - Output Capacitance Coss - 990 - Reverse Transfer Capacitance Crss - 300 - pF VGS=0V VDS=25V f=1.0MHz SOURCE-DRAIN DIODE Parameter Symbol Min. Typ. Max. Unit Test Conditions Forward On Voltage2 VSD - - 1.5 V IS=20A, VGS=0V Reverse Recovery Time3 TRR - 50 - Ns Reverse Recovery Charge QRR - 51 - nC IS=30A, VGS=0V dI/dt=100A/us Notes: 1. Pulse width limited by safe operating area. 2. Staring Tj=25°C, VDD=20V, L=0.1mH, RG=25Ω, IAS=10A. 3. Pulse width ≦300us, duty cycle≦2%.

75 A, 25 V , RDS(ON) 4.5 mΩ N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. A Page 3 of 4 CHARACTERISTIC CURVE

75 A, 25 V , RDS(ON) 4.5 mΩ N-Channel Enhancement Mode Power Mos.FET 01-June-2005 Rev. A Page 4 of 4 CHARACTERISTIC CURVE f=1.0MHz