SSE4N60 SECOS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

4.1A, 600 V , R DS(ON) 2.5 ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 02-May-2013 Rev. A Page 1 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

The N-Channel MOSFET is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance. This device is well suited for high efficiency switched mode power suppliers, active power factor correction, electronic lamp ballasts based half bridge topology.

FEATURES

/circle6 Robust high voltage termination /circle6 Avalanche energy specified /circle6 Diode is characterized for use in bridge circuits /circle6 Source to Drain diode recovery time comparable to a discrete fast recovery diode. ABSOLUTE MAXIMUM RATINGS (T c=25° C unless otherwise specified) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V Continuous Drain Current ID 4.1 A Pulsed Drain Current IDM 16.4 A Power Dissipation 2 98 W Derating factor above 25° C PD

0.78 W / ° C

Single Pulsed Avalanche Energy 1 E AS 262 mJ Repetitive Avalanche Energy 2 EAR 3.9 mJ Operating Junction and Storage Temperature Range TJ, T stg 150,-55 ~ 150 ° C Thermal Resistance Rating Maximum Junction to Ambient 1 R θJA 62.5 Maximum Junction to Case R θJC 1.28 ° C / W Notes: 1. L=26mH, I AS =4.1A, V DD =50V, R G =50 Ω, Starting T J=25° C 2. Repetitive Rating: Pulse width limited by maximum junction temperature. TO-220Y DC QQ M E J K IF 2 31 AB G H N L A - 10.6 I 12.70 14.70 B 1.58 1.82 J 3.60 4.80 C 1.20 1.45 K 1.14 1.40 D 14.22 16.50 L 5.84 6.86 E 3.50 4.00 M 2.03 2.90 F 2.70 3.30 N 0.35 0.64 G 1.20 1.78 Q 2.34 2.74 H 0.50 1.00 Gate Source Drain

4.1A, 600 V , R DS(ON) 2.5 ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 02-May-2013 Rev. A Page 2 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T A = 25 °C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Drain-Source On-Resistance R DS(ON) - 2.0 2.5 Ω V GS =10V, ID =2.05A Drain-Sounce Breakdown Voltage BV DSS 600 - - V V GS =0, I D =250 µA Zero Gate Voltage Drain Current I DSS - - 10 µA V DS =600V, V GS =0 Gate-Body Leakage Current, Forward I GSSF - - 100 nA V GS =30V, V DS =0 Gate-Body Leakage Current, Reverse I GSSR - - -100 nA VGS = -30V, VDS =0 Dynamic Total Gate Charge 1.2 Q g - 19 - Gate-Source Charge 1.2 Q gs - 2.9 - Gate-Drain Charge 1.2 Q gd - 8.2 - nC VDS =480V,I D =4.1A, VGS =10V Turn-on Delay Time 1.2 T d(on) - 25 - Rise Time 1.2 T r - 54 - Turn-off Delay Time 1.2 T d(off) - 120 - Fall Time 1.2 T f - 34 - nS VDD =300V, ID =4.1A, R G =25 Ω Input Capacitance Ciss - 570 - Output Capacitance Coss - 64 - Reverse Transfer Capacitance Crss - 14 - pF VDS =25V, VGS =0, f=1.0MHz Maximum Continuous Drain-Source Diode Forward Current I S - - 4.1 A Maximum Pulsed Drain-Source Diode Forward Current I SM - - 16.4 A Drain-Source Diode Forward Voltage V SD - - 1.4 V V GS =0, I S=4A Reverse Recovery Time 1 Trr - 560 - nS Reverse Recovery Charge 1 Qrr - 1.78 - µC VGS =0, I S=4.1A, dI F / dt = 100A / µs Notes: 1. Pulse Test: Pulse width < 300us, Duty cycle ≤ 2%. 2. Basically not affected by working temperature.

4.1A, 600 V , R DS(ON) 2.5 ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 02-May-2013 Rev. A Page 3 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

4.1A, 600 V , R DS(ON) 2.5 ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 02-May-2013 Rev. A Page 4 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

4.1A, 600 V , R DS(ON) 2.5 ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 02-May-2013 Rev. A Page 5 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE

4.1A, 600 V , R DS(ON) 2.5 ΩΩ ΩΩ N-Channel Enhancement Mode Power MOSFET 02-May-2013 Rev. A Page 6 of 6 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVE