SSE04N60SL SECOS | Alldatasheet
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Technical content
4A , 600V , R DS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET 17-Jul-2014 Rev. A Page 1 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. TO -220P RoHS Compliant Product A suffix of “-C” specifies halogen free
DESCRIPTION
The SSE04N60SL is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(on) and gate charge for most of the synchronous buck converter applications .
FEATURES
/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 600 V Gate-Source Voltage VGS ±30 V TC =25° C 4 A Continuous Drain Current TC =100° C ID 2.5 A Pulsed Drain Current IDM 16 A TC =25° C 100 Total Power Dissipation Derate above 25° C PD 0.8 W Single Pulse Avalanche Energy 1 E AS 217 mJ Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient R θJA 62.5 ° C / W Maximum Thermal Resistance Junction-Case R θJC 1.25 ° C / W Notes: 1. L=30mH,I AS =3.45A, V DD =155V, R G =25 Ω, Starting T J =25° C Gate Source Drain A 9.3 10.6 H 2.54 BCS. B 14.2 16.5 I 1.8 2.9 C 2.7 BSC. J 2.6 3.95 D 12.6 14.7 K 0.3 0.6 E 1.0 1.8 L 5.8 7.0 F 0.4 1.0 M 1.2 1.45 G 3.6 4.8
4A , 600V , R DS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET 17-Jul-2014 Rev. A Page 2 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (T J = 25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BV DSS 600 - - V V GS =0, I D = 250 µA Gate-Threshold Voltage V GS(th) 2 - 4 V V DS =V GS , I D =250 µA Gate-Source Leakage Current I GSS - - ±100 nA V GS = ±30V Drain-Source Leakage Current I DSS - - 1 µA V DS =600V, V GS =0 Static Drain-Source On-Resistance R DS(ON) - 2.0 2.4 Ω V GS =10V, I D =2A Total Gate Charge 1.2 Q g - 8.16 - Gate-Source Charge 1.2 Q gs - 2.63 - Gate-Drain Change 1.2 Q gd - 3.01 - nC ID =4A VDS =480V VGS =10V Turn-on Delay Time 1.2 T d(on) - 16.8 - Rise Time 1.2 Tr - 26.2 - Turn-off Delay Time 1.2 T d(off) - 37.4 - Fall Time 1.2 Tf - 20.2 - nS VDD =300V ID =4A R G =25 Ω Input Capacitance C iss - 449.7 - Output Capacitance C oss - 57 - Reverse Transfer Capacitance C rss - 2 - pF VGS =0 VDS =25V f =1.0MHz Source-Drain Diode Diode Forward Voltage V SD - - 1.4 V I S=4A, V GS =0 Continuous Source Current I S - - 4 A Pulsed Source Current I SM - - 16 A Integral Reverse P-N Junction Diode in the MOSFET Reverse Recovery Time 1 T rr - 441.53 - ns Reverse Recovery Charge 1 Q rr - 1.98 - µC IS=4A,V GS =0, dl F/dt=100A/ µS Notes: 1. Pulse Test: Pulse width ≦300 µS, Duty cycle ≦2% 2. Essentially independent of operating temperature.
4A , 600V , R DS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET 17-Jul-2014 Rev. A Page 3 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
4A , 600V , R DS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET 17-Jul-2014 Rev. A Page 4 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES
4A , 600V , R DS(ON) 2.4Ω N-Ch Enhancement Mode Power MOSFET 17-Jul-2014 Rev. A Page 5 of 5 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES