DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

23A, 40V , RDS(ON) 26m -20A, -40V , RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET 14-Nov-2012 Rev. B Page 1 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 9 5 0 4  = Date Code RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSDF9504 provide the designer with best combination of fast switching, low on-resistance and cost effectiveness. The SSDF9504 meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.

FEATURES

 Low Gate Charge  Low On-resistance MARKING CODE

PACKAGE INFORMATION

(TA=25°C unless otherwise specified) Ratings Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS 40 -40 V Gate-Source Voltage V GS ±20 ±20 V TA =25°C 23 -20 Continuous Drain Current @ VGS=10V 1 TA =100°C ID 18 -16 A Pulsed Drain Current 2 I DM 45 -44 A Single Pulse Avalanche Energy 3 E AS 28 66 mJ Avalanche Current I AS 17.8 -27.2 A Power Dissipation 4 P D 25 W Maximum Junction to Ambient 1 R θJA 62 °C / W Maximum Junction to Case 1 R θJC 5 °C / W Operating Junction & Storage Temperature Range T J, TSTG -55~150 °C Package MPQ Leader Size TO-252-4L 2.5K 13 inch A 6.4 6.8 F 0.4 0.6 B 9.4 10.2 G 2.2 2.4 C 5.4 5.8 H 0.45 0.55 D 2.4 3.0 I 1.4 1.8 E 1.27 REF. J 0.8 1.2 TO-252-4L

23A, 40V , RDS(ON) 26m -20A, -40V , RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET 14-Nov-2012 Rev. B Page 2 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter S ymbol Min. T yp. Max. Unit Test Conditions Static N-Ch 40 - - V GS=0, ID=250μA Drain-Source Breakdown Voltage P-Ch BVDSS -40 - - V VGS=0, ID= -250μA N-Ch 1 - 2.5 V DS=VGS, ID=250μA Gate-Threshold Voltage P-Ch VGS(th) -1 - -2.5 V VDS=VGS, ID= -250μA N-Ch - 8 - V DS=5V, ID=12A Forward Transconductance P-Ch gfs - 12.6 - S VDS= -5V, ID= -8A N-Ch - - ±100 V GS= ±20V Gate-Source Leakage Current P-Ch IGSS - - ±100 nA VGS= ±20V N-Ch - - 1 VDS=32V, VGS=0, TJ=25°C P-Ch - - -1 V DS= -32V, VGS=0, TJ=25°C N-Ch - - 5 V DS=32V, VGS=0, TJ=55°C Drain-Source Leakage Current P-Ch IDSS - - -5 μA VDS= -32V, VGS=0 , TJ=55°C N-Ch - - 26 V GS=10V, ID=6A P-Ch - - 40 V GS= -10V, ID= -6A N-Ch - - 35 V GS=4.5V, ID=4A Drain-Source On-Resistance 2 P-Ch RDS(ON) - - 65 mΩ VGS= -4.5V, ID= -4A N-Ch - 5.5 - Total Gate Charge P-Ch Qg - 9 - N-Ch - 1.25 - Gate-Source Charge P-Ch Qgs - 2.54 - N-Ch - 2.5 - Gate-Drain (“Miller”) Charge P-Ch Qgd - 3.1 - nC N-Channel VDS=20V, VGS=4.5V, ID=12A P-Channel V DS= -20V, VGS= -4.5V, ID= -12A N-Ch - 8.9 - Turn-on Delay Time P-Ch Td(on) - 19.2 - N-Ch - 2.2 - Rise Time P-Ch Tr - 12.8 - N-Ch - 41 - Turn-off Delay Time P-Ch Td(off) - 48.6 - N-Ch - 2.7 - Fall Time P-Ch Tf - 4.6 - nS N-Channel VDD=20V, RG=3.3Ω,RD=20Ω VGS=10V, ID=1A P-Channel V DD= -15V, RG=3.3Ω, RD=20Ω VGS= -10V, ID= -1A N-Ch - 593 - Input Capacitance P-Ch Ciss - 1004 - N-Ch - 76 - Output Capacitance P-Ch Coss - 108 - N-Ch - 56 - Reverse Transfer Capacitance P-Ch Crss - 80 - pF N-Channel VGS=0, VDS=15V, f=1.0MHz P-Channel V GS=0, VDS= -15V, f=1.0MHz N-Ch - 2.6 5.2 Gate Resistance P-Ch Rg - 13 16 Ω V DS=VGS=0, f=1.0MHz

23A, 40V , RDS(ON) 26m -20A, -40V , RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET 14-Nov-2012 Rev. B Page 3 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Guaranteed Avalanche Chatacteristics N-Ch 9 - - VDD=25V, L=0.1mH, IAS=10A Single Pulse Avalanche Energy 5 P-Ch EAS 20 - - mJ VDD= -25V, L=0.1mH, IAS= -15A Source-Drain Diode N-Ch - - 1.2 I S=1A, VGS=0, TJ=25°C Forward On Voltage2 P-Ch VSD - - -1 V IS= -1A, VGS=0, TJ=25°C N-Ch - - 23 Continuous Source Current 1,6 P-Ch IS - - -20 A N-Ch - - 45 Pulsed Source Current 2,6 P-Ch ISM - - -44 A VD=VG=0, Force Current Notes: 1 Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2 Pulse width ≦300μs, duty cycle≦2%. 3 The EAS data shows Max. rating . The test c ondition is VDD=25V,VGS=10V,L=0.1mH,IAS=17.8A 4 .The power dissipation is limited by 150 ℃junction temperature 5 The Min. value is 100% EAS tested guarantee. 6 The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

23A, 40V , RDS(ON) 26m -20A, -40V , RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET 14-Nov-2012 Rev. B Page 4 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (N-Channel)

23A, 40V , RDS(ON) 26m -20A, -40V , RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET 14-Nov-2012 Rev. B Page 5 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (N-Channel)

23A, 40V , RDS(ON) 26m -20A, -40V , RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET 14-Nov-2012 Rev. B Page 6 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (P-Channel)

23A, 40V , RDS(ON) 26m -20A, -40V , RDS(ON) 40m N And P-Channel Enhancement Mode Power MOSFET 14-Nov-2012 Rev. B Page 7 of 7 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTICS CURVE (P-Channel)