SSD9971

SSD9971_15 SECOS | Alldatasheet

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• Low On-Resistance * Simple Drive Requirement The TO-252 is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. such as DC/DC converters. TO-252 S D G Elektronische Bauelemente SSD9971 25A, 60V,RDS(ON)36 m N-Channel Enhancement Mode Power Mos.FET Ω A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20 Absolute Maximum Ratings Drain-Source Voltage 0.31 -55~+150 Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Continuous Drain Current,VGS@10V Continuous Drain Current,VGS@10V Pulsed Drain Current Total Power Dissipation ID@TC=100 ID@TC=25 IDM PD@TC=25 C o C o C o W / C C o o Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-case /W CRthj-c 3 2. Thermal Resistance Junction-ambient /W CRthj-a Max. Max. 110 o o Gate-Source Voltage Parameter Symbol Ratings Unit A V V A A W VDS VGS ± 20 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 RoHS Compliant Product

Electrical Characteristics( Tj=25 C Unless otherwise specified) o Notes: Pulse width limited by safe operating area. 1. Forward On Voltage Reverse Recovery Time Trr _ Reverse Recovery Change _Qrr nC nS VSD IS=25 A, VGS=0V.V1.2 IS=18A, VGS=0V. dl/dt=100A/us Parameter Symbol Max.Typ. Test ConditionMin. Unit __2 2.Pulse width 300us, dutycycle 2%.≦≦ 1700 160 110 nC nS pF VGS=0V VDS=25V f=1.0MHz VDD=30V ID=18A VGS=10V RG=3.3 RD=1.67 Ω Ω ID=18A VDS=48V VGS= 4.5V _ _ m Ω VGS=10V, ID=18A VGS=4.5V, ID=12A _ S VDS=10V, ID=18A__ 2700 Total Gate Charge Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Static Drain-Source On-Resistance Forward Transconductance Gfs RDS(ON) 0.05 1.0 3.0 100 V V/ Reference to 25C , ID=1mA oo C V nA uA uA VGS=0V, ID=250uA VGS= 20V± VDS=60V,VGS=0 VDS=48V,VGS=0 VDS=VGS, ID=250uA BVDSS BVDS/ Tj IDSS Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS o C o C Source-Drain Diode Elektronische Bauelemente SSD9971 25A, 60V,RDS(ON)36 m N-Channel Enhancement Mode Power Mos.FET Ω ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 h

25A, 60V,RDS(ON)36 m N-Channel Enhancement Mode Power Mos.FET Ω ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 h Characteristics Curve Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 2. Typical Output Characteristics

25A, 60V,RDS(ON)36 m N-Channel Enhancement Mode Power Mos.FET Ω ttp://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 h Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform