SSD9435

SSD9435 SECOS | Alldatasheet

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• Low Gate Charge * Simple Drive Requirement The TO-252 is universally used for commercial-industrial applications. achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. TO-252 A 6.40 6.80 G 0.50 0.70 B 5.20 5.50 H 2.20 2.40 C 6.80 7.20 J 0.45 0.55 D 2.20 2.80 K 0 0.15 E 2.30 REF. L 0.90 1.50 F 0.70 0.90 M 5.40 5.80 S 0.60 0.90 R 0.80 1.20 S D G * Fast Switching Absolute Maximum Ratings Drain-Source Voltage W / C CTj, Tstg 0.25 4.0 -72 -20 -13 -55~+150 o o Thermal Resistance Junction-case /W CRthj-c Total Power Dissipation Parameter Symbol Ratings Unit A V V A A ID@TC= W VDS VGS ID@TC= IDM -30 ± 20 Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Symbol Ratings Unit Thermal Resistance Junction-ambient /W CRthj-a Max. Max. 110 o o Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 PD@TC=100 C o Elektronische Bauelemente SSD9435 -20A, -30V,RDS(ON)50m P-Channel Enhancement Mode Power Mos.FET Ω PD@TC= 100 C o 25 C o 25 C o RoHS Compliant Product

Electrical Characteristics( Tj=25 C Unless otherwise specified) o Notes: Pulse width limited by Max. junction temperature.1. Parameter Symbol Max.Typ. Test ConditionMin. Unit Forward On Voltage Reverse Recovery Time Trr _ -10A, VGS=0V. -10A, VGS=0V. Reverse Recovery Change _Qrr nC nS VSD __ IS=V-1.22 IS= dl/dt=100A/us 9.6 463 187 140 nC nS pF VGS=0V VDS=25V f=1.0MHz VDD=-15V ID=-10A VGS=-10V RG=3.3 RD=1.5 Ω Ω ID=-10A VDS=-24V VGS=-4.5V _ _ m 9.6 Ω VGS=-10V, ID=-10A VGS=-4.5V, ID=-5 A_ S VDS=-10V, ID=-6 A__ Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf Gfs RDS(ON) 740 0.1 1.0 -3.0 100 -25 V V/ Reference to 25C , ID=-1mA oo C V nA uA uA VGS=0V, ID=-250uA VGS= 20V± VDS=-30V,VGS=0 VDS=-24V,VGS=0 VDS=VGS, ID=-250uA Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj IDSS Parameter Symbol Max.Typ. Test ConditionMin. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current(Tj=150 ) VGS(th) IGSS Forward Transconductance o C o C Source-Drain Diode 2.Pulse width 300us, dutycycle 2%.≦≦ ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 4 Elektronische Bauelemente SSD9435 -20A, -30V,RDS(ON)50m P-Channel Enhancement Mode Power Mos.FET Ω

ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 3 of 4 Elektronische Bauelemente SSD9435 -20A, -30V,RDS(ON)50m P-Channel Enhancement Mode Power Mos.FET Ω Characteristics Curve Fig 6. Gate Threshold Voltage v.s. Junction Temperature Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature

ttp://www.SeCoSGmbH.com/ A ny changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 4 of 4 Elektronische Bauelemente SSD9435 -20A, -30V,RDS(ON)50m P-Channel Enhancement Mode Power Mos.FET Ω Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform