SSD80N03-C SECOS | Alldatasheet

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Technical content

80A , 30V , R DS(ON) 5.5mΩ N-Ch Enhancement Mode Power MOSFET 06-Nov-2017 Rev. B Page 1 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A C D N O P G E FHK JM B TO -252 (D -Pack) 80N03 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 /box4/box4/box4/box4 RoHS Compliant Product A suffix of “-C” specifies halogen free

DESCRIPTION

The SSD80N03-C is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent R DS(ON) and gate charge for most of the synchronous buck converter applications .

FEATURES

/circle6 Advanced high cell density Trench technology /circle6 Super Low Gate Charge /circle6 Excellent CdV/dt effect decline /circle6 100% EAS Guaranteed /circle6 Green Device Available MARKING

PACKAGE INFORMATION

TO-252 2.5K 13 inch ORDER INFORMATION ABSOLUTE MAXIMUM RATINGS (T A=25° C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V VGS =10V, TC =25° C 80 A Continuous Drain Current 1 VGS =10V,TC =100° C ID 57 A Pulsed Drain Current 2 IDM 160 A Total Power Dissipation 4 T C =25° C P D 59 W Linear Derating Factor 0.5 W / ° C Single Pulse Avalanche Energy 3 E AS 98 mJ Single Pulse Avalanche Current I AS 14 A Operating Junction and Storage Temperature Range TJ, T STG -55~150 ° C Thermal Resistance Rating Maximum Thermal Resistance Junction-Ambient 1 R θJA 62 ° C / W Maximum Thermal Resistance Junction-Case 1 R θJC 2.1 ° C / W Part Number Type SSD80N03-C Lead (Pb)-free and Halogen-free 1 Gate Source Drain /box4/box4 /box4/box4= Date Code A 6. 3 6.9 J 2.3 REF. B 4.95 5.53 K 0.89 REF. C 2.1 2.5 M 0.45 1.14 D 0.4 0.9 N 1.55 Typ. E 6 7.7 O 0 0.15 F 2.90 REF P 0.58 REF. G 5.4 6.4 H 0.6 1.2

80A , 30V , R DS(ON) 5.5mΩ N-Ch Enhancement Mode Power MOSFET 06-Nov-2017 Rev. B Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS

(T J=25° C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Static Drain-Source Breakdown Voltage BV DSS 30 - - V V GS =0, I D =250 µA Gate-Threshold Voltage V GS(th) 1.0 - 2.5 V V DS =V GS , I D =250 µA Forward Transconductance g fs - 43 - S V DS =5V, I D =30A Gate-Source Leakage Current I GSS - - ±100 nA V GS =±20V TJ=25° C - - 1 V DS =24V, V GS =0 Drain-Source Leakage Current TJ=55° C IDSS - - 5 µA VDS =24V, V GS =0 - - 5.5 V GS =10V, I D =30A Static Drain-Source On-Resistance 2 R DS(ON) - - 8 m Ω VGS =4.5V, I D =15A Total Gate Charge Q g - 20 - Gate-Source Charge Q gs - 7.6 - Gate-Drain (“Miller”) Change Q gd - 7.2 - nC ID =15A VDS =15V VGS =4.5V Turn-on Delay Time T d(on) - 7.8 - Rise Time Tr - 15 - Turn-off Delay Time T d(off) - 37.3 - Fall Time Tf - 10.6 - nS VDD =15V ID =15A VGS =10V R G =3.3 Ω Input Capacitance C iss - 2295 - Output Capacitance C oss - 267 - Reverse Transfer Capacitance C rss - 210 - pF VGS =0 VDS =15V f=1.0MHz Source-Drain Diode Diode Forward Voltage 2 V SD - - 1 V I S=1A, V GS =0 Continuous Source Current 1,5 I S - - 80 A Pulsed Source Current 2,5 I SM - - 160 A VD =V G =0, Force Current Reverse Recovery Time T rr - 14 - nS Reverse Recovery Charge Q rr - 5 - nC IF=30A, dl/dt=100A/ µS TJ=25° C Notes: 1. The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2. The data tested by pulsed , pulse width ≦300 µs , duty cycle ≦2% 3. The EAS data shows Max. rating . The test condition is V DD =25V,V GS =10V,L=1mH,I AS =14A 4. The power dissipation is limited by 150° C junction temperature 5. The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.

80A , 30V , R DS(ON) 5.5mΩ N-Ch Enhancement Mode Power MOSFET 06-Nov-2017 Rev. B Page 3 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES

80A , 30V , R DS(ON) 5.5mΩ N-Ch Enhancement Mode Power MOSFET 06-Nov-2017 Rev. B Page 4 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. CHARACTERISTIC CURVES